IXFK120N25

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

30 Weeks

Surface Mount :

No

Power Dissipation :

700W

Number of Terminations :

3

Min Operating Temperature :

-55 °C

Case Connection :

DRAIN

Product Type :

MOSFET

Power Dissipation-Max :

700W Tc

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Configuration :

Single

Drain-source On Resistance-Max :

0.024Ohm

Packaging :

Tube

JESD-30 Code :

R-PSFM-T3

Gate to Source Voltage (Vgs) :

20V

Drain to Source Resistance :

24 mΩ

Turn-Off Delay Time :

130 ns

Power Dissipation (Max) :

700W (Tc)

Mount :

Through Hole

Vgs(th) (Max) @ Id :

5V @ 4mA

FET Feature :

-

JEDEC-95 Code :

TO-264AA

Additional Feature :

AVALANCHE RATED

Terminal Form :

THROUGH-HOLE

RoHS :

Details

Published :

2006

Qualification Status :

Not Qualified

Package Shape :

RECTANGULAR

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Application :

SWITCHING

Reach Compliance Code :

Compliant

Operating Temperature :

-55°C~175°C TJ

Max Power Dissipation :

700 W

Brand :

IXYS

Power Dissipation-Max (Abs) :

700 W

Tradename :

HiPerFET

Length :

19.96 mm

Product Category :

MOSFET

Polarity/Channel Type :

N-Channel

JESD-609 Code :

e1

Product Status :

Active

Input Capacitance (Ciss) (Max) @ Vds :

8000pF @ 25V

Number of Elements :

1

FET Type :

N-Channel

Fall Time (Typ) :

33 ns

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

250V

Max Operating Temperature :

175 °C

Package / Case :

TO-264-3, TO-264AA

Transistor Type :

1 N-Channel

Number of Channels :

1 Channel

Package :

Tube

Height :

26.16 mm

Gate Charge (Qg) (Max) @ Vgs :

185nC @ 10V

Input Capacitance :

8 nF

Avalanche Energy Rating (Eas) :

2500 mJ

Rise Time :

33ns

Maximum Operating Temperature :

+ 175 C

Supplier Device Package :

TO-264AA (IXFK)

Minimum Operating Temperature :

- 55 C

Base Product Number :

IXFK120

Transistor Element Material :

SILICON

Mounting Style :

Through Hole

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

250 V

Mounting Type :

Through Hole

Channel Mode :

Enhancement

Drain Current-Max (Abs) (ID) :

120 A

Number of Terminals :

3

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

250V

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

300A

Rds On (Max) @ Id, Vgs :

24m Ω @ 60A, 10V

Radiation Hardening :

No

Series :

PolarHT™ HiPerFET™

Rds On Max :

24 mΩ

Manufacturer :

IXYS

Transistor Polarity :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

120A

Width :

5.13 mm

Pbfree Code :

yes