IXFN170N10
- Mfr.Part #
- IXFN170N10
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 170A SOT-227B
- Stock
- 41,713
- In Stock :
- 41,713
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 170A
- Turn-Off Delay Time :
- 158 ns
- Mounting Type :
- Chassis Mount
- Drain Current-Max (Abs) (ID) :
- 170 A
- Manufacturer :
- IXYS
- Terminal Position :
- UPPER
- Package Shape :
- RECTANGULAR
- Rds On (Max) @ Id, Vgs :
- 10m Ω @ 500mA, 10V
- Height :
- 9.6 mm
- Factory Lead Time :
- 8 Weeks
- Drain to Source Breakdown Voltage :
- 100V
- Threshold Voltage :
- 4V
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Rise Time :
- 90ns
- Maximum Operating Temperature :
- + 150 C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Category :
- Discrete Semiconductor Modules
- Gate Charge (Qg) (Max) @ Vgs :
- 515nC @ 10V
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Number of Channels :
- 1 Channel
- Power Dissipation (Max) :
- 600W (Tc)
- Pulsed Drain Current-Max (IDM) :
- 680A
- Supplier Device Package :
- SOT-227B
- Package :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 170A Tc
- Minimum Operating Temperature :
- - 55 C
- Fall Time (Typ) :
- 79 ns
- DS Breakdown Voltage-Min :
- 100 V
- Drain to Source Voltage (Vdss) :
- 100V
- Gate to Source Voltage (Vgs) :
- 20V
- Resistance :
- 10MOhm
- Power Dissipation-Max (Abs) :
- 600 W
- Dual Supply Voltage :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- SOT-227-4, miniBLOC
- Packaging :
- Tube
- Power Dissipation-Max :
- 600W Tc
- Case Connection :
- Isolated
- Input Capacitance (Ciss) (Max) @ Vds :
- 10300pF @ 25V
- RoHS Status :
- RoHS Compliant
- Power Dissipation :
- 600W
- RoHS :
- Details
- Number of Terminations :
- 4
- Number of Terminals :
- 4
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.01 Ω
- Published :
- 2000
- Mounting Style :
- Chassis Mount
- Length :
- 38.3 mm
- JESD-30 Code :
- R-PUFM-X4
- Brand :
- IXYS
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Chassis Mount
- Series :
- HiPerFET™
- Tradename :
- HyperFET
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Surface Mount :
- No
- Product Status :
- Not For New Designs
- Number of Pins :
- 3
- FET Feature :
- --
- ECCN Code :
- EAR99
- Base Product Number :
- IXFN170
- Terminal Finish :
- Nickel (Ni)
- FET Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Product Type :
- Discrete Semiconductor Modules
- Transistor Polarity :
- N-Channel
- Reach Compliance Code :
- Compliant
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- UNSPECIFIED
- Pin Count :
- 4
- REACH SVHC :
- No SVHC
- Width :
- 25.07 mm
- Nominal Vgs :
- 4 V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- N-Channel
- Datasheets
- IXFN170N10

N-Channel Tube 10m Ω @ 500mA, 10V ±20V 10300pF @ 25V 515nC @ 10V 100V SOT-227-4, miniBLOC
IXFN170N10 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 10300pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 170A amps.In this device, the drain-source breakdown voltage is 100V and VGS=100V, so the drain-source breakdown voltage is 100V in this case.A device can conduct a maximum continuous current of [170 A] according to its drain current.It is [158 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 680A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 4V.The DS breakdown voltage should be maintained above 100 V to maintain normal operation.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFN170N10 Features
a continuous drain current (ID) of 170A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 158 ns
based on its rated peak drain current 680A.
a threshold voltage of 4V
a 100V drain to source voltage (Vdss)
IXFN170N10 Applications
There are a lot of IXYS
IXFN170N10 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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