IXFN170N10

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Mfr.Part #
IXFN170N10
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 100V 170A SOT-227B
Stock
41,713
In Stock :
41,713

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Continuous Drain Current (ID) :
170A
Turn-Off Delay Time :
158 ns
Mounting Type :
Chassis Mount
Drain Current-Max (Abs) (ID) :
170 A
Manufacturer :
IXYS
Terminal Position :
UPPER
Package Shape :
RECTANGULAR
Rds On (Max) @ Id, Vgs :
10m Ω @ 500mA, 10V
Height :
9.6 mm
Factory Lead Time :
8 Weeks
Drain to Source Breakdown Voltage :
100V
Threshold Voltage :
4V
Vgs(th) (Max) @ Id :
4V @ 8mA
Rise Time :
90ns
Maximum Operating Temperature :
+ 150 C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Product Category :
Discrete Semiconductor Modules
Gate Charge (Qg) (Max) @ Vgs :
515nC @ 10V
Number of Elements :
1
Vgs (Max) :
±20V
Number of Channels :
1 Channel
Power Dissipation (Max) :
600W (Tc)
Pulsed Drain Current-Max (IDM) :
680A
Supplier Device Package :
SOT-227B
Package :
Tube
Current - Continuous Drain (Id) @ 25°C :
170A Tc
Minimum Operating Temperature :
- 55 C
Fall Time (Typ) :
79 ns
DS Breakdown Voltage-Min :
100 V
Drain to Source Voltage (Vdss) :
100V
Gate to Source Voltage (Vgs) :
20V
Resistance :
10MOhm
Power Dissipation-Max (Abs) :
600 W
Dual Supply Voltage :
100V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
Package / Case :
SOT-227-4, miniBLOC
Packaging :
Tube
Power Dissipation-Max :
600W Tc
Case Connection :
Isolated
Input Capacitance (Ciss) (Max) @ Vds :
10300pF @ 25V
RoHS Status :
RoHS Compliant
Power Dissipation :
600W
RoHS :
Details
Number of Terminations :
4
Number of Terminals :
4
Transistor Element Material :
SILICON
Drain-source On Resistance-Max :
0.01 Ω
Published :
2000
Mounting Style :
Chassis Mount
Length :
38.3 mm
JESD-30 Code :
R-PUFM-X4
Brand :
IXYS
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mount :
Chassis Mount
Series :
HiPerFET™
Tradename :
HyperFET
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Surface Mount :
No
Product Status :
Not For New Designs
Number of Pins :
3
FET Feature :
--
ECCN Code :
EAR99
Base Product Number :
IXFN170
Terminal Finish :
Nickel (Ni)
FET Type :
N-Channel
Configuration :
SINGLE WITH BUILT-IN DIODE
Product Type :
Discrete Semiconductor Modules
Transistor Polarity :
N-Channel
Reach Compliance Code :
Compliant
Pbfree Code :
yes
Operating Temperature :
-55°C~150°C TJ
Terminal Form :
UNSPECIFIED
Pin Count :
4
REACH SVHC :
No SVHC
Width :
25.07 mm
Nominal Vgs :
4 V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Qualification Status :
Not Qualified
Transistor Application :
SWITCHING
Polarity/Channel Type :
N-Channel
Datasheets
IXFN170N10
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN170N10 from Xinshop,where excellence meets affordability. This product stands out with its Mounting Type:Chassis Mount, Number of Channels:1 Channel, Package / Case:SOT-227-4, miniBLOC, Number of Terminations:4, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, IXFN170N10 pinout, IXFN170N10 datasheet PDF, IXFN170N10 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN170N10 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN170N10


N-Channel Tube 10m Ω @ 500mA, 10V ±20V 10300pF @ 25V 515nC @ 10V 100V SOT-227-4, miniBLOC

IXFN170N10 Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 10300pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 170A amps.In this device, the drain-source breakdown voltage is 100V and VGS=100V, so the drain-source breakdown voltage is 100V in this case.A device can conduct a maximum continuous current of [170 A] according to its drain current.It is [158 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 680A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 4V.The DS breakdown voltage should be maintained above 100 V to maintain normal operation.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXFN170N10 Features


a continuous drain current (ID) of 170A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 158 ns
based on its rated peak drain current 680A.
a threshold voltage of 4V
a 100V drain to source voltage (Vdss)


IXFN170N10 Applications


There are a lot of IXYS
IXFN170N10 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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