IXFR80N10Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Package :

Tube

Vgs (Max) :

±20V

Package / Case :

ISOPLUS247™

Drain-source On Resistance-Max :

0.015Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

310W Tc

Packaging :

Tube

Reach Compliance Code :

Compliant

Gate to Source Voltage (Vgs) :

20V

Power Dissipation (Max) :

310W (Tc)

Product Status :

Obsolete

Vgs(th) (Max) @ Id :

--

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

15m Ω @ 76A, 10V

DS Breakdown Voltage-Min :

100 V

Supplier Device Package :

ISOPLUS247™

Power Dissipation :

310W

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

68 ns

JESD-609 Code :

e1

RoHS Status :

RoHS Compliant

Mounting Type :

Through Hole

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

1500 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Rise Time :

70ns

Number of Terminals :

3

Published :

2000

Number of Elements :

1

Manufacturer :

IXYS Corporation

Current - Continuous Drain (Id) @ 25°C :

76A Tc

Mount :

Through Hole

JESD-30 Code :

R-PSIP-T3

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

TIN SILVER COPPER

Transistor Application :

SWITCHING

Polarity/Channel Type :

N-Channel

Case Connection :

Isolated

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Package Shape :

RECTANGULAR

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

304 A

Series :

HiPerFET™

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

Qualification Status :

Not Qualified

Terminal Form :

THROUGH-HOLE

FET Type :

N-Channel

ECCN Code :

EAR99

Pbfree Code :

yes

Base Product Number :

IXFR80

Additional Feature :

AVALANCHE RATED

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

76A

Fall Time (Typ) :

30 ns

FET Feature :

--

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Voltage (Vdss) :

100V

Drain to Source Breakdown Voltage :

100V