IXFT13N100
- Mfr.Part #
- IXFT13N100
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 12.5A TO268
- Stock
- 39,837
- In Stock :
- 39,837
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 1000V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4000pF @ 25V
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 12.5A
- Drain Current-Max (Abs) (ID) :
- 12.5 A
- Rise Time :
- 33ns
- Power Dissipation :
- 300W
- Rds On (Max) @ Id, Vgs :
- 900m Ω @ 500mA, 10V
- Drain to Source Breakdown Voltage :
- 1kV
- Mount :
- Surface Mount
- Package :
- Tube
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Product Status :
- Obsolete
- Published :
- 2000
- FET Feature :
- --
- Resistance :
- 900mOhm
- Surface Mount :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- HiPerFET™
- Base Product Number :
- IXFT13
- Transistor Application :
- SWITCHING
- Min Operating Temperature :
- -55°C
- RoHS Status :
- RoHS Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 155nC @ 10V
- Terminal Position :
- Single
- Pbfree Code :
- yes
- Power Dissipation (Max) :
- 300W (Tc)
- Package Shape :
- RECTANGULAR
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSSO-G2
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Form :
- Gull wing
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 2
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Surface Mount
- Additional Feature :
- AVALANCHE RATED
- Pulsed Drain Current-Max (IDM) :
- 50A
- Manufacturer :
- IXYS Corporation
- Terminal Finish :
- Matte Tin (Sn)
- Voltage - Rated DC :
- 1kV
- Power Dissipation-Max (Abs) :
- 300 W
- Number of Terminals :
- 2
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Max Operating Temperature :
- 150°C
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Current - Continuous Drain (Id) @ 25°C :
- 12.5A Tc
- Power Dissipation-Max :
- 300W Tc
- Polarity/Channel Type :
- N-Channel
- JEDEC-95 Code :
- TO-268
- Transistor Element Material :
- SILICON
- Supplier Device Package :
- TO-268
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 62 ns
- Operating Temperature :
- --
- JESD-609 Code :
- e3
- Pin Count :
- 4
- Qualification Status :
- Not Qualified
- Current Rating :
- 13A
- Fall Time (Typ) :
- 32 ns
- Reach Compliance Code :
- not_compliant
- Element Configuration :
- Single
- Drain-source On Resistance-Max :
- 0.9 Ω
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 1000 V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- IXFT13N100

N-Channel Tube 900m Ω @ 500mA, 10V ±20V 4000pF @ 25V 155nC @ 10V 1000V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFT13N100 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 12.5A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=1kV. And this device has 1kV drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 12.5 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 62 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 50A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 1000 V in order to maintain normal operation.Operating this transistor requires a 1000V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFT13N100 Features
a continuous drain current (ID) of 12.5A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 50A.
a 1000V drain to source voltage (Vdss)
IXFT13N100 Applications
There are a lot of IXYS
IXFT13N100 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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