IXFT13N100

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Mfr.Part #
IXFT13N100
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 1000V 12.5A TO268
Stock
39,837
In Stock :
39,837

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Voltage (Vdss) :
1000V
Input Capacitance (Ciss) (Max) @ Vds :
4000pF @ 25V
Lead Free :
Lead Free
Continuous Drain Current (ID) :
12.5A
Drain Current-Max (Abs) (ID) :
12.5 A
Rise Time :
33ns
Power Dissipation :
300W
Rds On (Max) @ Id, Vgs :
900m Ω @ 500mA, 10V
Drain to Source Breakdown Voltage :
1kV
Mount :
Surface Mount
Package :
Tube
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Product Status :
Obsolete
Published :
2000
FET Feature :
--
Resistance :
900mOhm
Surface Mount :
yes
Operating Mode :
ENHANCEMENT MODE
Series :
HiPerFET™
Base Product Number :
IXFT13
Transistor Application :
SWITCHING
Min Operating Temperature :
-55°C
RoHS Status :
RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs :
155nC @ 10V
Terminal Position :
Single
Pbfree Code :
yes
Power Dissipation (Max) :
300W (Tc)
Package Shape :
RECTANGULAR
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-30 Code :
R-PSSO-G2
Gate to Source Voltage (Vgs) :
20V
Terminal Form :
Gull wing
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Vgs (Max) :
±20V
Number of Terminations :
2
Packaging :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Type :
Surface Mount
Additional Feature :
AVALANCHE RATED
Pulsed Drain Current-Max (IDM) :
50A
Manufacturer :
IXYS Corporation
Terminal Finish :
Matte Tin (Sn)
Voltage - Rated DC :
1kV
Power Dissipation-Max (Abs) :
300 W
Number of Terminals :
2
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Case Connection :
DRAIN
Max Operating Temperature :
150°C
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Current - Continuous Drain (Id) @ 25°C :
12.5A Tc
Power Dissipation-Max :
300W Tc
Polarity/Channel Type :
N-Channel
JEDEC-95 Code :
TO-268
Transistor Element Material :
SILICON
Supplier Device Package :
TO-268
Number of Elements :
1
Turn-Off Delay Time :
62 ns
Operating Temperature :
--
JESD-609 Code :
e3
Pin Count :
4
Qualification Status :
Not Qualified
Current Rating :
13A
Fall Time (Typ) :
32 ns
Reach Compliance Code :
not_compliant
Element Configuration :
Single
Drain-source On Resistance-Max :
0.9 Ω
Configuration :
SINGLE WITH BUILT-IN DIODE
FET Type :
N-Channel
DS Breakdown Voltage-Min :
1000 V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
IXFT13N100
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFT13N100 from Xinshop,where excellence meets affordability. This product stands out with its Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Number of Terminations:2, Mounting Type:Surface Mount, Operating Temperature:--, IXFT13N100 pinout, IXFT13N100 datasheet PDF, IXFT13N100 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFT13N100 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFT13N100


N-Channel Tube 900m Ω @ 500mA, 10V ±20V 4000pF @ 25V 155nC @ 10V 1000V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFT13N100 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 12.5A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=1kV. And this device has 1kV drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 12.5 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 62 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 50A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 1000 V in order to maintain normal operation.Operating this transistor requires a 1000V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFT13N100 Features


a continuous drain current (ID) of 12.5A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 50A.
a 1000V drain to source voltage (Vdss)


IXFT13N100 Applications


There are a lot of IXYS
IXFT13N100 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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