IXTH20N50D
- Mfr.Part #
- IXTH20N50D
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 20A TO247
- Stock
- 6,113
- In Stock :
- 6,113
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Style :
- Through Hole
- Package / Case :
- TO-247-3
- Maximum Operating Temperature :
- + 150 C
- Operating Mode :
- Depletion Mode
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Type :
- 1 N-Channel
- Channel Mode :
- Depletion
- Brand :
- IXYS
- Drain-source On Resistance-Max :
- 0.33Ohm
- Pbfree Code :
- yes
- Length :
- 16.26 mm
- Operating Temperature :
- -55°C~150°C TJ
- Package Shape :
- RECTANGULAR
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Manufacturer :
- IXYS
- Supplier Device Package :
- TO-247 (IXTH)
- Power Dissipation-Max (Abs) :
- 400 W
- Number of Channels :
- 1 Channel
- Mounting Type :
- Through Hole
- Product Status :
- Not For New Designs
- Mount :
- Through Hole
- Minimum Operating Temperature :
- - 55 C
- Factory Lead Time :
- 8 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 125nC @ 10V
- Turn-Off Delay Time :
- 110 ns
- Polarity/Channel Type :
- N-Channel
- Published :
- 2006
- Power Dissipation-Max :
- 400W Tc
- DS Breakdown Voltage-Min :
- 500 V
- RoHS Status :
- ROHS3 Compliant
- Product Category :
- MOSFET
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Drain Current-Max (Abs) (ID) :
- 20 A
- Terminal Position :
- Single
- FET Feature :
- Depletion Mode
- Rds On (Max) @ Id, Vgs :
- 330m Ω @ 10A, 10V
- Drain to Source Breakdown Voltage :
- 500V
- Fall Time (Typ) :
- 75 ns
- Package :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JESD-30 Code :
- R-PSFM-T3
- Input Capacitance (Ciss) (Max) @ Vds :
- 2500pF @ 25V
- Case Connection :
- DRAIN
- Gate to Source Voltage (Vgs) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- No
- Height :
- 21.46 mm
- Power Dissipation (Max) :
- 400W (Tc)
- RoHS :
- Details
- Transistor Element Material :
- SILICON
- Rise Time :
- 85ns
- Vgs(th) (Max) @ Id :
- --
- Packaging :
- Tube
- Pin Count :
- 3
- Lead Free :
- Lead Free
- JEDEC-95 Code :
- TO-247AA
- Product Type :
- MOSFET
- Number of Elements :
- 1
- Pulsed Drain Current-Max (IDM) :
- 50A
- Power Dissipation :
- 400W
- Width :
- 5.3 mm
- Vgs (Max) :
- ±30V
- Element Configuration :
- Single
- Qualification Status :
- Not Qualified
- Continuous Drain Current (ID) :
- 20A
- Number of Terminations :
- 3
- Configuration :
- Single
- Terminal Form :
- THROUGH-HOLE
- Reach Compliance Code :
- Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e1
- Drain to Source Voltage (Vdss) :
- 500V
- Series :
- --
- Transistor Application :
- SWITCHING
- Base Product Number :
- IXTH20
- Number of Terminals :
- 3
- Transistor Polarity :
- N-Channel
- Datasheets
- IXTH20N50D

N-Channel Tube 330m Ω @ 10A, 10V ±30V 2500pF @ 25V 125nC @ 10V 500V TO-247-3
IXTH20N50D Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.There is no drain current on this device since the maximum continuous current it can conduct is 20 A.As a result of its turn-off delay time, which is 110 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 50A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 500 V, it should remain above the 500 V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTH20N50D Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 50A.
a 500V drain to source voltage (Vdss)
IXTH20N50D Applications
There are a lot of IXYS
IXTH20N50D applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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