IXTH20N50D

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Mfr.Part #
IXTH20N50D
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 20A TO247
Stock
6,113
In Stock :
6,113

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Style :
Through Hole
Package / Case :
TO-247-3
Maximum Operating Temperature :
+ 150 C
Operating Mode :
Depletion Mode
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Type :
1 N-Channel
Channel Mode :
Depletion
Brand :
IXYS
Drain-source On Resistance-Max :
0.33Ohm
Pbfree Code :
yes
Length :
16.26 mm
Operating Temperature :
-55°C~150°C TJ
Package Shape :
RECTANGULAR
FET Type :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Manufacturer :
IXYS
Supplier Device Package :
TO-247 (IXTH)
Power Dissipation-Max (Abs) :
400 W
Number of Channels :
1 Channel
Mounting Type :
Through Hole
Product Status :
Not For New Designs
Mount :
Through Hole
Minimum Operating Temperature :
- 55 C
Factory Lead Time :
8 Weeks
Gate Charge (Qg) (Max) @ Vgs :
125nC @ 10V
Turn-Off Delay Time :
110 ns
Polarity/Channel Type :
N-Channel
Published :
2006
Power Dissipation-Max :
400W Tc
DS Breakdown Voltage-Min :
500 V
RoHS Status :
ROHS3 Compliant
Product Category :
MOSFET
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Drain Current-Max (Abs) (ID) :
20 A
Terminal Position :
Single
FET Feature :
Depletion Mode
Rds On (Max) @ Id, Vgs :
330m Ω @ 10A, 10V
Drain to Source Breakdown Voltage :
500V
Fall Time (Typ) :
75 ns
Package :
Tube
Current - Continuous Drain (Id) @ 25°C :
20A Tc
FET Technology :
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code :
R-PSFM-T3
Input Capacitance (Ciss) (Max) @ Vds :
2500pF @ 25V
Case Connection :
DRAIN
Gate to Source Voltage (Vgs) :
30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Surface Mount :
No
Height :
21.46 mm
Power Dissipation (Max) :
400W (Tc)
RoHS :
Details
Transistor Element Material :
SILICON
Rise Time :
85ns
Vgs(th) (Max) @ Id :
--
Packaging :
Tube
Pin Count :
3
Lead Free :
Lead Free
JEDEC-95 Code :
TO-247AA
Product Type :
MOSFET
Number of Elements :
1
Pulsed Drain Current-Max (IDM) :
50A
Power Dissipation :
400W
Width :
5.3 mm
Vgs (Max) :
±30V
Element Configuration :
Single
Qualification Status :
Not Qualified
Continuous Drain Current (ID) :
20A
Number of Terminations :
3
Configuration :
Single
Terminal Form :
THROUGH-HOLE
Reach Compliance Code :
Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-609 Code :
e1
Drain to Source Voltage (Vdss) :
500V
Series :
--
Transistor Application :
SWITCHING
Base Product Number :
IXTH20
Number of Terminals :
3
Transistor Polarity :
N-Channel
Datasheets
IXTH20N50D
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH20N50D from Xinshop,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Mounting Type:Through Hole, Number of Terminations:3, IXTH20N50D pinout, IXTH20N50D datasheet PDF, IXTH20N50D amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH20N50D ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH20N50D


N-Channel Tube 330m Ω @ 10A, 10V ±30V 2500pF @ 25V 125nC @ 10V 500V TO-247-3

IXTH20N50D Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.There is no drain current on this device since the maximum continuous current it can conduct is 20 A.As a result of its turn-off delay time, which is 110 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 50A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 500 V, it should remain above the 500 V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXTH20N50D Features


a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 50A.
a 500V drain to source voltage (Vdss)


IXTH20N50D Applications


There are a lot of IXYS
IXTH20N50D applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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