IXTH22N50P
- Mfr.Part #
- IXTH22N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 22A TO247
- Stock
- 7,384
- In Stock :
- 7,384
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Status :
- Active
- Mount :
- Through Hole
- Transistor Polarity :
- N-Channel
- Tradename :
- PolarHV
- JEDEC-95 Code :
- TO-247AD
- JESD-609 Code :
- e1
- DS Breakdown Voltage-Min :
- 500 V
- Base Product Number :
- IXTH22
- Width :
- 5.3 mm
- Reach Compliance Code :
- Compliant
- Configuration :
- Single
- Supplier Device Package :
- TO-247 (IXTH)
- Continuous Drain Current (ID) :
- 22A
- Surface Mount :
- No
- Case Connection :
- DRAIN
- Height :
- 21.46 mm
- Pulsed Drain Current-Max (IDM) :
- 50A
- Power Dissipation (Max) :
- 350W (Tc)
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Brand :
- IXYS
- Published :
- 2006
- Qualification Status :
- Not Qualified
- Maximum Operating Temperature :
- + 150 C
- Package Shape :
- RECTANGULAR
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Channels :
- 1 Channel
- Terminal Form :
- THROUGH-HOLE
- Element Configuration :
- Single
- Type :
- PolarHV Power MOSFET
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Product Type :
- MOSFET
- Minimum Operating Temperature :
- - 55 C
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- Rise Time :
- 27ns
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Drain-source On Resistance-Max :
- 0.27Ohm
- Manufacturer :
- IXYS
- Package / Case :
- TO-247-3
- Fall Time (Typ) :
- 21 ns
- Drain to Source Breakdown Voltage :
- 500V
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 350W Tc
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Length :
- 16.26 mm
- Factory Lead Time :
- 28 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 75 ns
- Series :
- PolarHV™
- Transistor Element Material :
- SILICON
- Power Dissipation-Max (Abs) :
- 350 W
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Transistor Type :
- 1 N-Channel
- Package :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 2630pF @ 25V
- Gate to Source Voltage (Vgs) :
- 30V
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±30V
- RoHS Status :
- ROHS3 Compliant
- Drain Current-Max (Abs) (ID) :
- 22 A
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 270m Ω @ 11A, 10V
- Mounting Type :
- Through Hole
- Product Category :
- MOSFET
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- JESD-30 Code :
- R-PSFM-T3
- Power Dissipation :
- 350W
- Polarity/Channel Type :
- N-Channel
- FET Type :
- N-Channel
- RoHS :
- Details
- Pbfree Code :
- yes
- Number of Terminals :
- 3
- Drain to Source Voltage (Vdss) :
- 500V
- Channel Mode :
- Enhancement
- Terminal Position :
- Single
- Mounting Style :
- Through Hole
- FET Feature :
- --
- Additional Feature :
- AVALANCHE RATED
- Datasheets
- IXTH22N50P

N-Channel Tube 270m Ω @ 11A, 10V ±30V 2630pF @ 25V 50nC @ 10V 500V TO-247-3
IXTH22N50P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 750 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2630pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.There is no drain current on this device since the maximum continuous current it can conduct is 22 A.As a result of its turn-off delay time, which is 75 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 50A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 500 V, it should remain above the 500 V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTH22N50P Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 50A.
a 500V drain to source voltage (Vdss)
IXTH22N50P Applications
There are a lot of IXYS
IXTH22N50P applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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