IXTH26N60P

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Mfr.Part #
IXTH26N60P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 26A TO247
Stock
1,455
In Stock :
1,455

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Breakdown Voltage :
600V
Transistor Type :
1 N-Channel
Element Configuration :
Single
Number of Terminals :
3
Input Capacitance (Ciss) (Max) @ Vds :
4150pF @ 25V
Terminal Position :
Single
JEDEC-95 Code :
TO-247AD
RoHS :
Details
Package Shape :
RECTANGULAR
Pulsed Drain Current-Max (IDM) :
65A
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Base Product Number :
IXTH26
Voltage - Rated DC :
600V
JESD-30 Code :
R-PSFM-T3
Turn-Off Delay Time :
75 ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Rise Time :
27ns
Published :
2006
Current Rating :
26A
Power Dissipation :
460W
Vgs(th) (Max) @ Id :
5V @ 250μA
Fall Time (Typ) :
21 ns
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Application :
SWITCHING
Surface Mount :
No
JESD-609 Code :
e1
FET Feature :
--
Length :
16.26 mm
Operating Mode :
ENHANCEMENT MODE
Subcategory :
MOSFETs
Operating Temperature :
-55°C~150°C TJ
Product Type :
MOSFET
Gate Charge (Qg) (Max) @ Vgs :
72nC @ 10V
Current - Continuous Drain (Id) @ 25°C :
26A Tc
Reach Compliance Code :
Compliant
Vgs (Max) :
±30V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Mount :
Through Hole
Terminal Form :
THROUGH-HOLE
Number of Pins :
3
Resistance :
270mOhm
Case Connection :
DRAIN
Polarity/Channel Type :
N-Channel
Number of Channels :
1 Channel
Additional Feature :
AVALANCHE RATED
Drain to Source Voltage (Vdss) :
600V
Avalanche Energy Rating (Eas) :
1200 mJ
Tradename :
PolarHV
Power Dissipation (Max) :
460W (Tc)
Rds On (Max) @ Id, Vgs :
270m Ω @ 500mA, 10V
Package / Case :
TO-247-3
Gate to Source Voltage (Vgs) :
30V
Mounting Style :
Through Hole
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Supplier Device Package :
TO-247 (IXTH)
Manufacturer :
IXYS
Package :
Tube
Continuous Drain Current (ID) :
26A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Factory Lead Time :
28 Weeks
Pbfree Code :
yes
Mounting Type :
Through Hole
FET Type :
N-Channel
DS Breakdown Voltage-Min :
600 V
Maximum Operating Temperature :
+ 150 C
Drain-source On Resistance-Max :
0.27 Ω
Channel Mode :
Enhancement
Lead Free :
Lead Free
Brand :
IXYS
Series :
PolarHV™
Packaging :
Tube
Transistor Polarity :
N-Channel
Product Status :
Active
Width :
5.3 mm
Product Category :
MOSFET
Number of Terminations :
3
Configuration :
Single
Minimum Operating Temperature :
- 55 C
Type :
PolarHV Power MOSFET
Height :
21.46 mm
Power Dissipation-Max :
460W Tc
Radiation Hardening :
No
Pin Count :
3
Qualification Status :
Not Qualified
Datasheets
IXTH26N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH26N60P from Xinshop,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Number of Channels:1 Channel, Package / Case:TO-247-3, Mounting Type:Through Hole, Number of Terminations:3, Type:PolarHV Power MOSFET, IXTH26N60P pinout, IXTH26N60P datasheet PDF, IXTH26N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH26N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH26N60P


N-Channel Tube 270m Ω @ 500mA, 10V ±30V 4150pF @ 25V 72nC @ 10V 600V TO-247-3

IXTH26N60P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1200 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4150pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 26A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.It is [75 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 65A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 600 V to maintain normal operation.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTH26N60P Features


the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 65A.
a 600V drain to source voltage (Vdss)


IXTH26N60P Applications


There are a lot of IXYS
IXTH26N60P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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