IXTH26N60P
- Mfr.Part #
- IXTH26N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 26A TO247
- Stock
- 1,455
- In Stock :
- 1,455
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- 600V
- Transistor Type :
- 1 N-Channel
- Element Configuration :
- Single
- Number of Terminals :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 4150pF @ 25V
- Terminal Position :
- Single
- JEDEC-95 Code :
- TO-247AD
- RoHS :
- Details
- Package Shape :
- RECTANGULAR
- Pulsed Drain Current-Max (IDM) :
- 65A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Base Product Number :
- IXTH26
- Voltage - Rated DC :
- 600V
- JESD-30 Code :
- R-PSFM-T3
- Turn-Off Delay Time :
- 75 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rise Time :
- 27ns
- Published :
- 2006
- Current Rating :
- 26A
- Power Dissipation :
- 460W
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Fall Time (Typ) :
- 21 ns
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Surface Mount :
- No
- JESD-609 Code :
- e1
- FET Feature :
- --
- Length :
- 16.26 mm
- Operating Mode :
- ENHANCEMENT MODE
- Subcategory :
- MOSFETs
- Operating Temperature :
- -55°C~150°C TJ
- Product Type :
- MOSFET
- Gate Charge (Qg) (Max) @ Vgs :
- 72nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 26A Tc
- Reach Compliance Code :
- Compliant
- Vgs (Max) :
- ±30V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Mount :
- Through Hole
- Terminal Form :
- THROUGH-HOLE
- Number of Pins :
- 3
- Resistance :
- 270mOhm
- Case Connection :
- DRAIN
- Polarity/Channel Type :
- N-Channel
- Number of Channels :
- 1 Channel
- Additional Feature :
- AVALANCHE RATED
- Drain to Source Voltage (Vdss) :
- 600V
- Avalanche Energy Rating (Eas) :
- 1200 mJ
- Tradename :
- PolarHV
- Power Dissipation (Max) :
- 460W (Tc)
- Rds On (Max) @ Id, Vgs :
- 270m Ω @ 500mA, 10V
- Package / Case :
- TO-247-3
- Gate to Source Voltage (Vgs) :
- 30V
- Mounting Style :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Supplier Device Package :
- TO-247 (IXTH)
- Manufacturer :
- IXYS
- Package :
- Tube
- Continuous Drain Current (ID) :
- 26A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 28 Weeks
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- FET Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 600 V
- Maximum Operating Temperature :
- + 150 C
- Drain-source On Resistance-Max :
- 0.27 Ω
- Channel Mode :
- Enhancement
- Lead Free :
- Lead Free
- Brand :
- IXYS
- Series :
- PolarHV™
- Packaging :
- Tube
- Transistor Polarity :
- N-Channel
- Product Status :
- Active
- Width :
- 5.3 mm
- Product Category :
- MOSFET
- Number of Terminations :
- 3
- Configuration :
- Single
- Minimum Operating Temperature :
- - 55 C
- Type :
- PolarHV Power MOSFET
- Height :
- 21.46 mm
- Power Dissipation-Max :
- 460W Tc
- Radiation Hardening :
- No
- Pin Count :
- 3
- Qualification Status :
- Not Qualified
- Datasheets
- IXTH26N60P

N-Channel Tube 270m Ω @ 500mA, 10V ±30V 4150pF @ 25V 72nC @ 10V 600V TO-247-3
IXTH26N60P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1200 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4150pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 26A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.It is [75 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 65A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 600 V to maintain normal operation.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTH26N60P Features
the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 65A.
a 600V drain to source voltage (Vdss)
IXTH26N60P Applications
There are a lot of IXYS
IXTH26N60P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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