IXTH30N60P
- Mfr.Part #
- IXTH30N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 30A TO247
- Stock
- 482
- In Stock :
- 482
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 28 Weeks
- Rds On (Max) @ Id, Vgs :
- 240m Ω @ 15A, 10V
- Transistor Element Material :
- SILICON
- Product Status :
- Active
- Published :
- 2006
- Number of Pins :
- 3
- Transistor Type :
- 1 N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminals :
- 3
- FET Type :
- N-Channel
- Supplier Device Package :
- TO-247 (IXTH)
- Type :
- PolarHV Power MOSFET
- Mounting Style :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- RoHS :
- Details
- Surface Mount :
- No
- Polarity/Channel Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 82nC @ 10V
- Additional Feature :
- AVALANCHE RATED
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Lead Free :
- Lead Free
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Reach Compliance Code :
- Compliant
- Transistor Polarity :
- N-Channel
- Packaging :
- Tube
- JEDEC-95 Code :
- TO-247AD
- Continuous Drain Current (ID) :
- 30A
- Drain to Source Breakdown Voltage :
- 600V
- Brand :
- IXYS
- Package :
- Tube
- Manufacturer :
- IXYS
- Channel Mode :
- Enhancement
- JESD-609 Code :
- e1
- Pulsed Drain Current-Max (IDM) :
- 80A
- Power Dissipation (Max) :
- 540W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds :
- 5050pF @ 25V
- Height :
- 21.46 mm
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Configuration :
- Single
- Transistor Application :
- SWITCHING
- Length :
- 16.26 mm
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Terminal Position :
- Single
- Case Connection :
- DRAIN
- DS Breakdown Voltage-Min :
- 600 V
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-247-3
- Base Product Number :
- IXTH30
- Drain-source On Resistance-Max :
- 0.24Ohm
- Vgs (Max) :
- ±30V
- Turn-Off Delay Time :
- 80 ns
- Minimum Operating Temperature :
- - 55 C
- Tradename :
- PolarHV
- FET Feature :
- --
- Drain to Source Voltage (Vdss) :
- 600V
- Package Shape :
- RECTANGULAR
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-30 Code :
- R-PSFM-T3
- Qualification Status :
- Not Qualified
- Subcategory :
- MOSFETs
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 20ns
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Power Dissipation :
- 540W
- Terminal Form :
- THROUGH-HOLE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Maximum Operating Temperature :
- + 150 C
- Series :
- PolarHV™
- Fall Time (Typ) :
- 25 ns
- Current Rating :
- 30A
- Product Type :
- MOSFET
- Operating Mode :
- ENHANCEMENT MODE
- Voltage - Rated DC :
- 600V
- Mount :
- Through Hole
- Element Configuration :
- Single
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Terminations :
- 3
- Width :
- 5.3 mm
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation-Max :
- 540W Tc
- Product Category :
- MOSFET
- Number of Elements :
- 1
- Datasheets
- IXTH30N60P

N-Channel Tube 240m Ω @ 15A, 10V ±30V 5050pF @ 25V 82nC @ 10V 600V TO-247-3
IXTH30N60P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5050pF @ 25V.This device has a continuous drain current (ID) of [30A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 80 ns.A maximum pulsed drain current of 80A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600 V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTH30N60P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 80A.
a 600V drain to source voltage (Vdss)
IXTH30N60P Applications
There are a lot of IXYS
IXTH30N60P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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