IXTH36N50P

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Mfr.Part #
IXTH36N50P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 36A TO247
Stock
108
In Stock :
108

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminals :
3
JESD-609 Code :
e1
Minimum Operating Temperature :
- 55 C
Power Dissipation (Max) :
540W (Tc)
Additional Feature :
AVALANCHE RATED
Gate to Source Voltage (Vgs) :
30V
Terminal Form :
THROUGH-HOLE
MSL :
-
Transistor Polarity :
N-Channel
Drain to Source Voltage (Vdss) :
500V
Power Dissipation :
540W
Mounting Type :
Through Hole
Length :
16.26 mm
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Elements :
1
Product Status :
Active
Transistor Element Material :
SILICON
Rds On (Max) @ Id, Vgs :
170m Ω @ 500mA, 10V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
FET Type :
N-Channel
Lead Free :
Lead Free
Channel Type :
N Channel
Resistance :
170mOhm
Mounting Style :
Through Hole
Avalanche Energy Rating (Eas) :
1500 mJ
Series :
PolarHV™
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Channels :
1 Channel
Threshold Voltage :
5V
JESD-30 Code :
R-PSFM-T3
RoHS :
Details
Continuous Drain Current (ID) :
36A
Subcategory :
MOSFETs
Rise Time :
27ns
Manufacturer :
IXYS
Fall Time (Typ) :
21 ns
Operating Temperature :
-55°C~150°C TJ
Product Category :
MOSFET
Gate Charge (Qg) (Max) @ Vgs :
85nC @ 10V
Vgs(th) (Max) @ Id :
5V @ 250μA
Operating Mode :
ENHANCEMENT MODE
Qualification :
-
Polarity/Channel Type :
N-Channel
Nominal Vgs :
5 V
Configuration :
Single
Reach Compliance Code :
Compliant
Base Product Number :
IXTH36
JEDEC-95 Code :
TO-247AD
Package / Case :
TO-247-3
Product Type :
MOSFET
Channel Mode :
Enhancement
Type :
PolarHV Power MOSFET
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Packaging :
Tube
Voltage - Rated DC :
500V
Input Capacitance (Ciss) (Max) @ Vds :
5500pF @ 25V
Published :
2006
Supplier Device Package :
TO-247 (IXTH)
ECCN Code :
EAR99
Width :
5.3 mm
Terminal Position :
Single
Element Configuration :
Single
FET Feature :
--
Drain-source On Resistance-Max :
0.17 Ω
RoHS Status :
ROHS3 Compliant
Pin Count :
3
Transistor Application :
SWITCHING
Surface Mount :
No
Brand :
IXYS
Transistor Type :
1 N-Channel
Maximum Operating Temperature :
+ 150 C
Continuous Drain Current Id :
36A
DS Breakdown Voltage-Min :
500 V
Package :
Tube
Tradename :
PolarHV
Number of Terminations :
3
Number of Pins :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mount :
Through Hole
Current Rating :
36A
Current - Continuous Drain (Id) @ 25°C :
36A Tc
Drain to Source Breakdown Voltage :
500V
Qualification Status :
Not Qualified
Pulsed Drain Current-Max (IDM) :
108A
Package Shape :
RECTANGULAR
Power Dissipation-Max :
540W Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Height :
21.46 mm
Pbfree Code :
yes
Vgs (Max) :
±30V
REACH SVHC :
No SVHC
Turn-Off Delay Time :
75 ns
Case Connection :
DRAIN
Datasheets
IXTH36N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH36N50P from Xinshop,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, Type:PolarHV Power MOSFET, Number of Terminations:3, Number of Pins:3, IXTH36N50P pinout, IXTH36N50P datasheet PDF, IXTH36N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH36N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH36N50P


N-Channel Tube 170m Ω @ 500mA, 10V ±30V 5500pF @ 25V 85nC @ 10V 500V TO-247-3

IXTH36N50P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5500pF @ 25V.This device has a continuous drain current (ID) of [36A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.A maximum pulsed drain current of 108A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTH36N50P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 108A.
a threshold voltage of 5V
a 500V drain to source voltage (Vdss)


IXTH36N50P Applications


There are a lot of IXYS
IXTH36N50P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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