IXTH36N50P
- Mfr.Part #
- IXTH36N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 36A TO247
- Stock
- 108
- In Stock :
- 108
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminals :
- 3
- JESD-609 Code :
- e1
- Minimum Operating Temperature :
- - 55 C
- Power Dissipation (Max) :
- 540W (Tc)
- Additional Feature :
- AVALANCHE RATED
- Gate to Source Voltage (Vgs) :
- 30V
- Terminal Form :
- THROUGH-HOLE
- MSL :
- -
- Transistor Polarity :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 500V
- Power Dissipation :
- 540W
- Mounting Type :
- Through Hole
- Length :
- 16.26 mm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Elements :
- 1
- Product Status :
- Active
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 170m Ω @ 500mA, 10V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- Channel Type :
- N Channel
- Resistance :
- 170mOhm
- Mounting Style :
- Through Hole
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Series :
- PolarHV™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Channels :
- 1 Channel
- Threshold Voltage :
- 5V
- JESD-30 Code :
- R-PSFM-T3
- RoHS :
- Details
- Continuous Drain Current (ID) :
- 36A
- Subcategory :
- MOSFETs
- Rise Time :
- 27ns
- Manufacturer :
- IXYS
- Fall Time (Typ) :
- 21 ns
- Operating Temperature :
- -55°C~150°C TJ
- Product Category :
- MOSFET
- Gate Charge (Qg) (Max) @ Vgs :
- 85nC @ 10V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Operating Mode :
- ENHANCEMENT MODE
- Qualification :
- -
- Polarity/Channel Type :
- N-Channel
- Nominal Vgs :
- 5 V
- Configuration :
- Single
- Reach Compliance Code :
- Compliant
- Base Product Number :
- IXTH36
- JEDEC-95 Code :
- TO-247AD
- Package / Case :
- TO-247-3
- Product Type :
- MOSFET
- Channel Mode :
- Enhancement
- Type :
- PolarHV Power MOSFET
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tube
- Voltage - Rated DC :
- 500V
- Input Capacitance (Ciss) (Max) @ Vds :
- 5500pF @ 25V
- Published :
- 2006
- Supplier Device Package :
- TO-247 (IXTH)
- ECCN Code :
- EAR99
- Width :
- 5.3 mm
- Terminal Position :
- Single
- Element Configuration :
- Single
- FET Feature :
- --
- Drain-source On Resistance-Max :
- 0.17 Ω
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Surface Mount :
- No
- Brand :
- IXYS
- Transistor Type :
- 1 N-Channel
- Maximum Operating Temperature :
- + 150 C
- Continuous Drain Current Id :
- 36A
- DS Breakdown Voltage-Min :
- 500 V
- Package :
- Tube
- Tradename :
- PolarHV
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Current Rating :
- 36A
- Current - Continuous Drain (Id) @ 25°C :
- 36A Tc
- Drain to Source Breakdown Voltage :
- 500V
- Qualification Status :
- Not Qualified
- Pulsed Drain Current-Max (IDM) :
- 108A
- Package Shape :
- RECTANGULAR
- Power Dissipation-Max :
- 540W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Height :
- 21.46 mm
- Pbfree Code :
- yes
- Vgs (Max) :
- ±30V
- REACH SVHC :
- No SVHC
- Turn-Off Delay Time :
- 75 ns
- Case Connection :
- DRAIN
- Datasheets
- IXTH36N50P

N-Channel Tube 170m Ω @ 500mA, 10V ±30V 5500pF @ 25V 85nC @ 10V 500V TO-247-3
IXTH36N50P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5500pF @ 25V.This device has a continuous drain current (ID) of [36A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.A maximum pulsed drain current of 108A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTH36N50P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 108A.
a threshold voltage of 5V
a 500V drain to source voltage (Vdss)
IXTH36N50P Applications
There are a lot of IXYS
IXTH36N50P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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