IXTH36P10

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max (Abs) :

180 W

Configuration :

Single

Pulsed Drain Current-Max (IDM) :

144A

Terminal Form :

THROUGH-HOLE

Power Dissipation-Max :

180W Tc

Product Category :

MOSFET

Rise Time :

37ns

Series :

--

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 25V

Manufacturer :

IXYS

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Width :

5.3 mm

Brand :

IXYS

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-247-3

Transistor Application :

SWITCHING

Product Type :

MOSFET

Operating Mode :

ENHANCEMENT MODE

FET Type :

P-Channel

Vgs (Max) :

±20V

Turn-Off Delay Time :

65 ns

Transistor Polarity :

P-Channel

Drain Current-Max (Abs) (ID) :

36 A

Transistor Element Material :

SILICON

Transistor Type :

1 P-Channel

Current - Continuous Drain (Id) @ 25°C :

36A Tc

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.075Ohm

Package Shape :

RECTANGULAR

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

DS Breakdown Voltage-Min :

100 V

Qualification Status :

Not Qualified

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

100V

Number of Elements :

1

FET Feature :

--

Polarity/Channel Type :

P-Channel

Length :

16.26 mm

Factory Lead Time :

24 Weeks

JESD-30 Code :

R-PSFM-T3

Height :

21.46 mm

Reach Compliance Code :

Compliant

Additional Feature :

AVALANCHE RATED

JEDEC-95 Code :

TO-247AD

Supplier Device Package :

TO-247 (IXTH)

RoHS Status :

ROHS3 Compliant

Base Product Number :

IXTH36

Number of Channels :

1 Channel

Product Status :

Active

Published :

2002

Number of Pins :

3

Channel Mode :

Enhancement

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Minimum Operating Temperature :

- 55 C

RoHS :

Details

Mounting Style :

Through Hole

Rds On (Max) @ Id, Vgs :

75m Ω @ 18A, 10V

Power Dissipation (Max) :

180W (Tc)

Number of Terminals :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

180W

Surface Mount :

No

Fall Time (Typ) :

28 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

36A

Mount :

Through Hole

Drain to Source Breakdown Voltage :

-100V

Maximum Operating Temperature :

+ 150 C

Package :

Tube

Vgs(th) (Max) @ Id :

5V @ 250μA