IXTH3N120

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Pulsed Drain Current-Max (IDM) :

12A

Subcategory :

MOSFETs

Additional Feature :

AVALANCHE RATED

Mount :

Through Hole

Transistor Element Material :

SILICON

Product Status :

Active

Number of Channels :

1 Channel

Fall Time (Typ) :

18 ns

Transistor Polarity :

N-Channel

Package Shape :

RECTANGULAR

Pin Count :

3

Gate to Source Voltage (Vgs) :

20V

DS Breakdown Voltage-Min :

1200 V

Surface Mount :

No

Packaging :

Tube

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

700 mJ

Height :

21.46 mm

RoHS :

Details

Power Dissipation :

150W

Maximum Operating Temperature :

+ 150 C

Supplier Device Package :

TO-247 (IXTH)

Reach Compliance Code :

Compliant

Length :

16.26 mm

FET Type :

N-Channel

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

JESD-609 Code :

e1

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Package / Case :

TO-247-3

Case Connection :

DRAIN

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

1.2kV

Continuous Drain Current (ID) :

3A

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Published :

2003

Mounting Type :

Through Hole

Minimum Operating Temperature :

- 55 C

Channel Mode :

Enhancement

Brand :

IXYS

Width :

5.3 mm

Manufacturer :

IXYS

Configuration :

Single

Drain to Source Voltage (Vdss) :

1200V

Number of Terminals :

3

Rise Time :

15ns

Terminal Form :

THROUGH-HOLE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

3A

Base Product Number :

IXTH3

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JEDEC-95 Code :

TO-247AD

Polarity/Channel Type :

N-Channel

Vgs (Max) :

±20V

Transistor Type :

1 N-Channel

Power Dissipation-Max :

200W Tc

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

4.5 Ω @ 500mA, 10V

FET Feature :

--

Factory Lead Time :

28 Weeks

Drain-source On Resistance-Max :

4.5 Ω

Product Type :

MOSFET

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Style :

Through Hole

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Series :

--

Product Category :

MOSFET

Type :

High Voltage Power MOSFET

Package :

Box

Turn-Off Delay Time :

32 ns

Power Dissipation (Max) :

200W (Tc)