IXTH3N150
- Mfr.Part #
- IXTH3N150
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1500V 3A TO247
- Stock
- 41,391
- In Stock :
- 41,391
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- Unknown
- Manufacturer :
- IXYS
- Factory Lead Time :
- 28 Weeks
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 3A Tc
- Power Dissipation-Max :
- 250W Tc
- Number of Channels :
- 1 Channel
- Operating Temperature :
- -55°C~150°C TJ
- Maximum Operating Temperature :
- + 150 C
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Supplier Device Package :
- TO-247 (IXTH)
- Continuous Drain Current (ID) :
- 3A
- Gate Charge (Qg) (Max) @ Vgs :
- 38.6nC @ 10V
- Published :
- 2012
- FET Type :
- N-Channel
- Base Product Number :
- IXTH3
- Pulsed Drain Current-Max (IDM) :
- 9A
- Brand :
- IXYS
- Product Status :
- Active
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Power Dissipation (Max) :
- 250W (Tc)
- Terminal Position :
- Single
- Packaging :
- Tube
- Product Category :
- MOSFET
- RoHS Status :
- ROHS3 Compliant
- Drain Current-Max (Abs) (ID) :
- 3A
- FET Feature :
- --
- Package :
- Tube
- Case Connection :
- DRAIN
- Mounting Style :
- Through Hole
- Additional Feature :
- AVALANCHE RATED
- RoHS :
- Details
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Channel Mode :
- Enhancement
- Drain to Source Voltage (Vdss) :
- 1500V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1375pF @ 25V
- Mount :
- Through Hole
- JEDEC-95 Code :
- TO-247AD
- Series :
- --
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- DS Breakdown Voltage-Min :
- 1500V
- Number of Elements :
- 1
- Transistor Polarity :
- N-Channel
- Minimum Operating Temperature :
- - 55 C
- Transistor Type :
- 1 N-Channel
- Qualification Status :
- Not Qualified
- Rds On (Max) @ Id, Vgs :
- 7.3 Ω @ 1.5A, 10V
- Vgs (Max) :
- ±30V
- Avalanche Energy Rating (Eas) :
- 250 mJ
- Pin Count :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-247-3
- Product Type :
- MOSFET
- Number of Pins :
- 3
- Datasheets
- IXTH3N150

N-Channel Tube 7.3 Ω @ 1.5A, 10V ±30V 1375pF @ 25V 38.6nC @ 10V 1500V TO-247-3
IXTH3N150 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 250 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1375pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 3A.3A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 9A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 1500V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1500V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTH3N150 Features
the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 3A
based on its rated peak drain current 9A.
a 1500V drain to source voltage (Vdss)
IXTH3N150 Applications
There are a lot of IXYS
IXTH3N150 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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