IXTH41N25

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Mfr.Part #
IXTH41N25
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 250V 41A TO247
Stock
34,097
In Stock :
34,097

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Fall Time (Typ) :
17 ns
Terminal Form :
THROUGH-HOLE
Vgs(th) (Max) @ Id :
4V @ 250µA
Configuration :
Single
Brand :
IXYS
Product Status :
Active
Package Shape :
RECTANGULAR
Width :
5.3 mm
Transistor Type :
1 N-Channel
Mounting Type :
Through Hole
Drain to Source Voltage (Vdss) :
250V
FET Feature :
-
Input Capacitance (Ciss) (Max) @ Vds :
3200pF @ 25V
Current - Continuous Drain (Id) @ 25°C :
41A Tc
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tube
Turn-Off Delay Time :
79 ns
Series :
-
Pin Count :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain to Source Breakdown Voltage :
250V
Mounting Style :
Through Hole
Maximum Operating Temperature :
+ 150 C
FET Type :
N-Channel
Manufacturer :
IXYS
JESD-30 Code :
R-PSFM-T3
Pbfree Code :
yes
Channel Mode :
Enhancement
Power Dissipation-Max :
300W Tc
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Published :
2003
ECCN Code :
EAR99
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS :
Details
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Application :
SWITCHING
Terminal Position :
Single
Number of Terminations :
3
Operating Mode :
ENHANCEMENT MODE
Continuous Drain Current (ID) :
41A
Reach Compliance Code :
Compliant
Product Type :
MOSFET
Drain-source On Resistance-Max :
0.072Ohm
Case Connection :
DRAIN
Avalanche Energy Rating (Eas) :
1000 mJ
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Pulsed Drain Current-Max (IDM) :
164A
Transistor Element Material :
SILICON
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Base Product Number :
IXTH41
Package / Case :
TO-247-3
Transistor Polarity :
N-Channel
Qualification Status :
Not Qualified
DS Breakdown Voltage-Min :
250 V
Subcategory :
MOSFETs
Power Dissipation :
300W
Mount :
Through Hole
Length :
16.26 mm
JEDEC-95 Code :
TO-247AD
Rise Time :
19ns
Element Configuration :
Single
Gate to Source Voltage (Vgs) :
20V
Vgs (Max) :
±20V
Package :
Tube
Number of Channels :
1 Channel
Rds On (Max) @ Id, Vgs :
72m Ω @ 15A, 10V
Power Dissipation (Max) :
300W (Tc)
Product Category :
MOSFET
Minimum Operating Temperature :
- 55 C
Polarity/Channel Type :
N-Channel
Surface Mount :
No
Number of Elements :
1
Height :
21.46 mm
RoHS Status :
ROHS3 Compliant
Number of Pins :
3
Number of Terminals :
3
Supplier Device Package :
TO-247 (IXTH)
Datasheets
IXTH41N25
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH41N25 from Xinshop,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-247-3, Number of Channels:1 Channel, Number of Pins:3, IXTH41N25 pinout, IXTH41N25 datasheet PDF, IXTH41N25 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH41N25 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH41N25


N-Channel Tube 72m Ω @ 15A, 10V ±20V 3200pF @ 25V 110nC @ 10V 250V TO-247-3

IXTH41N25 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1000 mJ.A device's maximal input capacitance is 3200pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 41A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 250V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 79 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 164A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 250 V.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTH41N25 Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 41A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 79 ns
based on its rated peak drain current 164A.
a 250V drain to source voltage (Vdss)


IXTH41N25 Applications


There are a lot of IXYS
IXTH41N25 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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