IXTH41N25
- Mfr.Part #
- IXTH41N25
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 41A TO247
- Stock
- 34,097
- In Stock :
- 34,097
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 17 ns
- Terminal Form :
- THROUGH-HOLE
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Configuration :
- Single
- Brand :
- IXYS
- Product Status :
- Active
- Package Shape :
- RECTANGULAR
- Width :
- 5.3 mm
- Transistor Type :
- 1 N-Channel
- Mounting Type :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 250V
- FET Feature :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- 3200pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 41A Tc
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tube
- Turn-Off Delay Time :
- 79 ns
- Series :
- -
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Breakdown Voltage :
- 250V
- Mounting Style :
- Through Hole
- Maximum Operating Temperature :
- + 150 C
- FET Type :
- N-Channel
- Manufacturer :
- IXYS
- JESD-30 Code :
- R-PSFM-T3
- Pbfree Code :
- yes
- Channel Mode :
- Enhancement
- Power Dissipation-Max :
- 300W Tc
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Published :
- 2003
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS :
- Details
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Terminal Position :
- Single
- Number of Terminations :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 41A
- Reach Compliance Code :
- Compliant
- Product Type :
- MOSFET
- Drain-source On Resistance-Max :
- 0.072Ohm
- Case Connection :
- DRAIN
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 164A
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Base Product Number :
- IXTH41
- Package / Case :
- TO-247-3
- Transistor Polarity :
- N-Channel
- Qualification Status :
- Not Qualified
- DS Breakdown Voltage-Min :
- 250 V
- Subcategory :
- MOSFETs
- Power Dissipation :
- 300W
- Mount :
- Through Hole
- Length :
- 16.26 mm
- JEDEC-95 Code :
- TO-247AD
- Rise Time :
- 19ns
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- Package :
- Tube
- Number of Channels :
- 1 Channel
- Rds On (Max) @ Id, Vgs :
- 72m Ω @ 15A, 10V
- Power Dissipation (Max) :
- 300W (Tc)
- Product Category :
- MOSFET
- Minimum Operating Temperature :
- - 55 C
- Polarity/Channel Type :
- N-Channel
- Surface Mount :
- No
- Number of Elements :
- 1
- Height :
- 21.46 mm
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Number of Terminals :
- 3
- Supplier Device Package :
- TO-247 (IXTH)
- Datasheets
- IXTH41N25

N-Channel Tube 72m Ω @ 15A, 10V ±20V 3200pF @ 25V 110nC @ 10V 250V TO-247-3
IXTH41N25 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1000 mJ.A device's maximal input capacitance is 3200pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 41A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 250V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 79 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 164A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 250 V.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTH41N25 Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 41A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 79 ns
based on its rated peak drain current 164A.
a 250V drain to source voltage (Vdss)
IXTH41N25 Applications
There are a lot of IXYS
IXTH41N25 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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