IXTH450P2
- Mfr.Part #
- IXTH450P2
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 16A TO247
- Stock
- 122
- In Stock :
- 122
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Manufacturer :
- IXYS
- Transistor Element Material :
- SILICON
- Mounting Style :
- Through Hole
- Pbfree Code :
- yes
- Power Dissipation :
- 300W
- Package / Case :
- TO-247-3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Configuration :
- Single
- JESD-30 Code :
- R-PSFM-T3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package Shape :
- RECTANGULAR
- Drain to Source Voltage (Vdss) :
- 500V
- Power Dissipation-Max :
- 300W Tc
- Drain-source On Resistance-Max :
- 0.33Ohm
- Polarity/Channel Type :
- N-Channel
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Minimum Operating Temperature :
- - 55 C
- Pulsed Drain Current-Max (IDM) :
- 35A
- Drain Current-Max (Abs) (ID) :
- 16 A
- RoHS :
- Details
- Element Configuration :
- Single
- DS Breakdown Voltage-Min :
- 500 V
- Channel Mode :
- Enhancement
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Factory Lead Time :
- 28 Weeks
- Number of Channels :
- 1 Channel
- Transistor Type :
- 1 N-Channel
- Radiation Hardening :
- No
- Transistor Polarity :
- N-Channel
- Base Product Number :
- IXTH450
- Tradename :
- Polar2 HiPerFET
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reach Compliance Code :
- Compliant
- Continuous Drain Current (ID) :
- 16A
- Terminal Position :
- Single
- FET Feature :
- --
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Maximum Operating Temperature :
- + 150 C
- Type :
- PolarP2 Power MOSFET
- Number of Elements :
- 1
- Vgs (Max) :
- ±30V
- JEDEC-95 Code :
- TO-247
- Lead Free :
- Lead Free
- JESD-609 Code :
- e1
- Product Status :
- Active
- Supplier Device Package :
- TO-247 (IXTH)
- Brand :
- IXYS
- Package :
- Tube
- Packaging :
- Tube
- Drain to Source Breakdown Voltage :
- 500V
- Mounting Type :
- Through Hole
- Product Type :
- MOSFET
- Pin Count :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- Product Category :
- MOSFET
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Terminals :
- 3
- Terminal Form :
- THROUGH-HOLE
- Published :
- 2011
- Power Dissipation (Max) :
- 300W (Tc)
- Rds On (Max) @ Id, Vgs :
- 330m Ω @ 8A, 10V
- Power Dissipation-Max (Abs) :
- 300 W
- Surface Mount :
- No
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Additional Feature :
- AVALANCHE RATED
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 2530pF @ 25V
- Series :
- PolarP2™
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- IXTH450P2

N-Channel Tube 330m Ω @ 8A, 10V ±30V 2530pF @ 25V 43nC @ 10V 500V TO-247-3
IXTH450P2 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 750 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2530pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 16A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.16 A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 35A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTH450P2 Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 500V voltage
based on its rated peak drain current 35A.
a 500V drain to source voltage (Vdss)
IXTH450P2 Applications
There are a lot of IXYS
IXTH450P2 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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