IXTH50N20

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Nominal Vgs :

4 V

Current - Continuous Drain (Id) @ 25°C :

50A Tc

RoHS Status :

ROHS3 Compliant

Series :

MegaMOS™

Manufacturer :

IXYS

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Current Rating :

50A

Length :

16.26 mm

Package Shape :

RECTANGULAR

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

Transistor Type :

1 N-Channel

Drain Current-Max (Abs) (ID) :

50 A

Package :

Tube

Transistor Polarity :

N-Channel

Power Dissipation-Max :

300W Tc

Number of Pins :

3

Channel Mode :

Enhancement

Fall Time (Typ) :

16 ns

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

45m Ω @ 25A, 10V

Reach Compliance Code :

Compliant

Continuous Drain Current (ID) :

50A

Base Product Number :

IXTH50

Rise Time :

15ns

Input Capacitance (Ciss) (Max) @ Vds :

4600pF @ 25V

Power Dissipation Ambient-Max :

300 W

Threshold Voltage :

4V

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

200V

Packaging :

Tube

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Product Type :

MOSFET

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.045 Ω

RoHS :

Details

Number of Terminals :

3

Drain to Source Breakdown Voltage :

200V

Width :

5.3 mm

Product Category :

MOSFET

Minimum Operating Temperature :

- 55 C

Dual Supply Voltage :

200V

Vgs(th) (Max) @ Id :

4V @ 250µA

Brand :

IXYS

Factory Lead Time :

28 Weeks

Terminal Form :

THROUGH-HOLE

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V

Power Dissipation (Max) :

300W (Tc)

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

Transistor Application :

SWITCHING

ECCN Code :

EAR99

JEDEC-95 Code :

TO-247AD

DS Breakdown Voltage-Min :

200 V

Maximum Operating Temperature :

+ 150 C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Published :

2000

Pulsed Drain Current-Max (IDM) :

200A

Resistance :

45mOhm

Mount :

Through Hole

Element Configuration :

Single

REACH SVHC :

No SVHC

Height :

21.46 mm

Power Dissipation-Max (Abs) :

250 W

Turn-Off Delay Time :

72 ns

Voltage - Rated DC :

200V

Mounting Type :

Through Hole

Supplier Device Package :

TO-247 (IXTH)

Mounting Style :

Through Hole

Vgs (Max) :

±20V

Power Dissipation :

300W

Surface Mount :

No

Polarity/Channel Type :

N-Channel

Package / Case :

TO-247-3

Number of Channels :

1 Channel

FET Feature :

--

Product Status :

Active

Configuration :

Single

FET Type :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pin Count :

3

Radiation Hardening :

No