IXTH86N25T
- Mfr.Part #
- IXTH86N25T
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 86A TO247
- Stock
- 9,490
- In Stock :
- 9,490
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Minimum Operating Temperature :
- - 55 C
- RoHS :
- Details
- Terminal Form :
- THROUGH-HOLE
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 105nC @ 10V
- Additional Feature :
- AVALANCHE RATED
- Surface Mount :
- No
- Rds On (Max) @ Id, Vgs :
- 37m Ω @ 43A, 10V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-247AD
- Product Type :
- MOSFET
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Qualification Status :
- Not Qualified
- DS Breakdown Voltage-Min :
- 250V
- Tradename :
- HiPerFET
- Input Capacitance (Ciss) (Max) @ Vds :
- 5330pF @ 25V
- Brand :
- IXYS
- Terminal Position :
- Single
- Rise Time :
- 28 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 86A Tc
- Package :
- Tube
- Drain-source On Resistance-Max :
- 0.037Ohm
- FET Type :
- N-Channel
- Base Product Number :
- IXTH86
- Operating Temperature :
- -55°C~150°C TJ
- Product Category :
- MOSFET
- Vgs (Max) :
- ±30V
- FET Feature :
- -
- Drain Current-Max (Abs) (ID) :
- 86A
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Through Hole
- Type :
- Trench Gate
- Supplier Device Package :
- TO-247 (IXTH)
- Maximum Operating Temperature :
- + 150 C
- Packaging :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Manufacturer :
- IXYS
- Factory Lead Time :
- 30 Weeks
- Published :
- 2012
- JESD-30 Code :
- R-PSFM-T3
- Package / Case :
- TO-247-3
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Subcategory :
- MOSFETs
- Mounting Style :
- Through Hole
- Number of Terminals :
- 3
- Reach Compliance Code :
- Compliant
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Package Shape :
- RECTANGULAR
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Power Dissipation (Max) :
- 540W (Ta)
- Series :
- Trench
- Transistor Polarity :
- N-Channel
- Power Dissipation-Max :
- 540W Ta
- Number of Terminations :
- 3
- Product Status :
- Active
- Pbfree Code :
- yes
- JESD-609 Code :
- e1
- Drain to Source Voltage (Vdss) :
- 250V
- Pulsed Drain Current-Max (IDM) :
- 190A
- Polarity/Channel Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Product :
- Power MOSFET Modules
- Datasheets
- IXTH86N25T
N-Channel Tube 37m Ω @ 43A, 10V ±30V 5330pF @ 25V 105nC @ 10V 250V TO-247-3
IXTH86N25T Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5330pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [86A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 190A.The DS breakdown voltage should be maintained above 250V to maintain normal operation.To operate this transistor, you will need a 250V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTH86N25T Features
the avalanche energy rating (Eas) is 1500 mJ
based on its rated peak drain current 190A.
a 250V drain to source voltage (Vdss)
IXTH86N25T Applications
There are a lot of IXYS
IXTH86N25T applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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