IXTJ4N150

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Terminal Position :

Single

Height :

21.34 mm

Package :

Tube

Supplier Device Package :

TO-247

Product Status :

Active

Brand :

IXYS

Rise Time :

23 ns

Continuous Drain Current (ID) :

2.5A

Base Product Number :

IXTJ4

Power Dissipation-Max :

110W Tc

Minimum Operating Temperature :

- 55 C

Number of Terminations :

3

FET Type :

N-Channel

Series :

--

Manufacturer :

IXYS

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSFM-T3

Avalanche Energy Rating (Eas) :

350 mJ

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

Isolated

Transistor Polarity :

N-Channel

FET Feature :

--

Published :

2013

Rds On (Max) @ Id, Vgs :

6 Ω @ 2A, 10V

Length :

6.13 mm

DS Breakdown Voltage-Min :

1500V

Mount :

Through Hole

Maximum Operating Temperature :

+ 150 C

Width :

5.21 mm

Number of Elements :

1

Type :

High Voltage Power MOSFET

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

6Ohm

Product Category :

MOSFET

Transistor Element Material :

SILICON

RoHS :

Details

Transistor Application :

SWITCHING

Vgs (Max) :

±30V

Drain to Source Voltage (Vdss) :

1500V

Input Capacitance (Ciss) (Max) @ Vds :

1576pF @ 25V

Channel Mode :

Enhancement

Operating Temperature :

-55°C~150°C TJ

Product Type :

MOSFET

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

2.5A Tc

Package / Case :

TO-247-3

Pulsed Drain Current-Max (IDM) :

12A

Reach Compliance Code :

Unknown

Power Dissipation (Max) :

110W (Tc)

Factory Lead Time :

24 Weeks

Mounting Style :

Through Hole

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

44.5nC @ 10V

Number of Channels :

1 Channel

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED