IXTK20N150
- Mfr.Part #
- IXTK20N150
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1500V 20A TO264
- Stock
- 1,050
- In Stock :
- 1,050
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 1500V
- RoHS :
- Details
- Additional Feature :
- AVALANCHE RATED
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Number of Elements :
- 1
- Supplier Device Package :
- TO-264 (IXTK)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Packaging :
- Tube
- Product Category :
- MOSFET
- Number of Terminations :
- 3
- Manufacturer :
- IXYS
- Mounting Style :
- Through Hole
- Package :
- Tube
- Drain-source On Resistance-Max :
- 1Ohm
- Factory Lead Time :
- 28 Weeks
- Transistor Application :
- SWITCHING
- Terminal Position :
- Single
- Product Status :
- Active
- Reach Compliance Code :
- Unknown
- Number of Terminals :
- 3
- Power Dissipation-Max :
- 1250W Tc
- Product Type :
- MOSFET
- Mounting Type :
- Through Hole
- Continuous Drain Current (ID) :
- 20A
- Transistor Polarity :
- N-Channel
- Package Shape :
- RECTANGULAR
- Series :
- --
- DS Breakdown Voltage-Min :
- 1500V
- Terminal Form :
- THROUGH-HOLE
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 7800pF @ 25V
- Published :
- 2012
- Case Connection :
- DRAIN
- Mount :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 50A
- Vgs(th) (Max) @ Id :
- 4.5V @ 1mA
- Vgs (Max) :
- ±30V
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Polarity/Channel Type :
- N-Channel
- Package / Case :
- TO-264-3, TO-264AA
- Operating Mode :
- ENHANCEMENT MODE
- FET Feature :
- --
- Brand :
- IXYS
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation (Max) :
- 1250W (Tc)
- Operating Temperature :
- -55°C~150°C TJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 215nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 1 Ω @ 10A, 10V
- Surface Mount :
- No
- JEDEC-95 Code :
- TO-264AA
- Base Product Number :
- IXTK20
- JESD-30 Code :
- R-PSFM-T3
- Drain Current-Max (Abs) (ID) :
- 20 A
- Power Dissipation-Max (Abs) :
- 1250 W
- Datasheets
- IXTK20N150

N-Channel Tube 1 Ω @ 10A, 10V ±30V 7800pF @ 25V 215nC @ 10V 1500V TO-264-3, TO-264AA
IXTK20N150 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 7800pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 20A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 20 A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 50A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 1500V in order to maintain normal operation.Operating this transistor requires a 1500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTK20N150 Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 20A
based on its rated peak drain current 50A.
a 1500V drain to source voltage (Vdss)
IXTK20N150 Applications
There are a lot of IXYS
IXTK20N150 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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