IXTK60N50L2
- Mfr.Part #
- IXTK60N50L2
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 60A TO264
- Stock
- 697
- In Stock :
- 697
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- Single
- Surface Mount :
- No
- DS Breakdown Voltage-Min :
- 500V
- Series :
- Linear L2™
- Input Capacitance (Ciss) (Max) @ Vds :
- 24000pF @ 25V
- Width :
- 5.31 mm
- Factory Lead Time :
- 17 Weeks
- Case Connection :
- DRAIN
- Tradename :
- Linear L2
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Channels :
- 1 Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Status :
- Active
- Length :
- 20.29 mm
- Nominal Vgs :
- 2.5 V
- Pulsed Drain Current-Max (IDM) :
- 150 A
- Power Dissipation-Max :
- 960W Tc
- Transistor Polarity :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Channel Mode :
- Enhancement
- Product Category :
- MOSFET
- Number of Pins :
- 3
- Rise Time :
- 40 ns
- Mount :
- Through Hole
- Power Dissipation :
- 960W
- Vgs (Max) :
- ±30V
- Published :
- 2006
- RoHS :
- Details
- JEDEC-95 Code :
- TO-264AA
- RoHS Status :
- ROHS3 Compliant
- Subcategory :
- MOSFETs
- Mounting Style :
- Through Hole
- Number of Terminations :
- 3
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 610nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Base Product Number :
- IXTK60
- Height :
- 26.59 mm
- Minimum Operating Temperature :
- - 55 C
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Continuous Drain Current (ID) :
- 60A
- Brand :
- IXYS
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 30A, 10V
- Maximum Operating Temperature :
- + 150 C
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-264-3, TO-264AA
- ECCN Code :
- EAR99
- Type :
- LinearL2 Power MOSFET
- Polarity/Channel Type :
- N-Channel
- Terminal Finish :
- TIN SILVER COPPER
- Terminal Form :
- THROUGH-HOLE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lead Free :
- Lead Free
- Drain to Source Voltage (Vdss) :
- 500V
- Product Type :
- MOSFET
- JESD-609 Code :
- e1
- Pin Count :
- 3
- Drain-source On Resistance-Max :
- 0.1 Ω
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Manufacturer :
- IXYS
- FET Feature :
- --
- Number of Terminals :
- 3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Additional Feature :
- AVALANCHE RATED
- Mounting Type :
- Through Hole
- Package :
- Tube
- REACH SVHC :
- No SVHC
- JESD-30 Code :
- R-PSFM-T3
- Pbfree Code :
- yes
- Power Dissipation (Max) :
- 960W (Tc)
- Package Shape :
- RECTANGULAR
- Supplier Device Package :
- TO-264 (IXTK)
- Packaging :
- Tube
- Qualification Status :
- Not Qualified
- Threshold Voltage :
- 2.5V
- Reach Compliance Code :
- Compliant
- Transistor Element Material :
- SILICON
- Datasheets
- IXTK60N50L2

N-Channel Tube 100m Ω @ 30A, 10V ±30V 24000pF @ 25V 610nC @ 10V 500V TO-264-3, TO-264AA
IXTK60N50L2 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 24000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 60A amps.As far as peak drain current is concerned, its maximum pulsed current is 150 A.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 2.5V.The DS breakdown voltage should be maintained above 500V to maintain normal operation.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTK60N50L2 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 60A
based on its rated peak drain current 150 A.
a threshold voltage of 2.5V
a 500V drain to source voltage (Vdss)
IXTK60N50L2 Applications
There are a lot of IXYS
IXTK60N50L2 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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