IXTP1N80P
- Mfr.Part #
- IXTP1N80P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 1A TO220AB
- Stock
- 49,497
- In Stock :
- 49,497
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation (Max) :
- 42W (Tc)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-220-3
- Qualification Status :
- Not Qualified
- RoHS :
- Details
- Number of Terminations :
- 3
- Minimum Operating Temperature :
- - 55 C
- Power Dissipation-Max (Abs) :
- 42 W
- Avalanche Energy Rating (Eas) :
- 75 mJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±20V
- Drain to Source Voltage (Vdss) :
- 800V
- Operating Temperature :
- -55°C~150°C TJ
- DS Breakdown Voltage-Min :
- 800 V
- Package Shape :
- RECTANGULAR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Status :
- Active
- Additional Feature :
- AVALANCHE RATED
- Number of Channels :
- 1 Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 9nC @ 10V
- Product Type :
- MOSFET
- Current - Continuous Drain (Id) @ 25°C :
- 1A Tc
- Channel Mode :
- Enhancement
- Package :
- Tube
- Mounting Style :
- Through Hole
- FET Feature :
- --
- Configuration :
- Single
- Mount :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 2A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Rds On (Max) @ Id, Vgs :
- 14 Ω @ 500mA, 10V
- Transistor Type :
- 1 N-Channel
- Drain-source On Resistance-Max :
- 14 Ω
- Gate to Source Voltage (Vgs) :
- 20V
- Factory Lead Time :
- 24 Weeks
- JEDEC-95 Code :
- TO-220AB
- Supplier Device Package :
- TO-220AB
- Brand :
- IXYS
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- Published :
- 2009
- Packaging :
- Tube
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 800V
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 250pF @ 25V
- Power Dissipation-Max :
- 42W Tc
- Number of Elements :
- 1
- Manufacturer :
- IXYS
- Product Category :
- MOSFET
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Terminal Form :
- THROUGH-HOLE
- Terminal Position :
- Single
- JESD-609 Code :
- e1
- Surface Mount :
- No
- Number of Terminals :
- 3
- Vgs(th) (Max) @ Id :
- 4V @ 50μA
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 1A
- Pin Count :
- 3
- Polarity/Channel Type :
- N-Channel
- Base Product Number :
- IXTP1
- Maximum Operating Temperature :
- + 150 C
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PSFM-T3
- Reach Compliance Code :
- Compliant
- Drain Current-Max (Abs) (ID) :
- 1A
- Series :
- Polar™
- Transistor Polarity :
- N-Channel
- Power Dissipation :
- 42W
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Datasheets
- IXTP1N80P

N-Channel Tube 14 Ω @ 500mA, 10V ±20V 250pF @ 25V 9nC @ 10V 800V TO-220-3
IXTP1N80P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 75 mJ.The maximum input capacitance of this device is 250pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 1A.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.As shown in the table below, the drain current of this device is 1A.There is no pulsed drain current maximum for this device based on its rated peak drain current 2A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 800 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTP1N80P Features
the avalanche energy rating (Eas) is 75 mJ
a continuous drain current (ID) of 1A
a drain-to-source breakdown voltage of 800V voltage
based on its rated peak drain current 2A.
a 800V drain to source voltage (Vdss)
IXTP1N80P Applications
There are a lot of IXYS
IXTP1N80P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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