IXTP1R4N100P

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Mfr.Part #
IXTP1R4N100P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1000V 1.4A TO220AB
Stock
22,828
In Stock :
22,828

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Mode :
ENHANCEMENT MODE
Turn-Off Delay Time :
65 ns
Transistor Polarity :
N-Channel
Mounting Type :
Through Hole
JESD-30 Code :
R-PSFM-T3
Vgs(th) (Max) @ Id :
4.5V @ 50μA
Height :
9.15 mm
Transistor Type :
1 N-Channel
Element Configuration :
Single
Terminal Position :
Single
Base Product Number :
IXTP1
Qualification Status :
Not Qualified
Pbfree Code :
yes
Product Category :
MOSFET
Gate to Source Voltage (Vgs) :
20V
Transistor Element Material :
SILICON
Rise Time :
35ns
Additional Feature :
AVALANCHE RATED
Polarity/Channel Type :
N-Channel
Maximum Operating Temperature :
+ 150 C
Rds On (Max) @ Id, Vgs :
11 Ω @ 500mA, 10V
Avalanche Energy Rating (Eas) :
100 mJ
Package :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
450pF @ 25V
Drain to Source Breakdown Voltage :
1kV
Terminal Form :
THROUGH-HOLE
Packaging :
Tube
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Product Type :
MOSFET
Product Status :
Active
Mounting Style :
Through Hole
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package Shape :
RECTANGULAR
Power Dissipation-Max :
63W Tc
Transistor Application :
SWITCHING
Channel Mode :
Enhancement
DS Breakdown Voltage-Min :
1000 V
Width :
4.83 mm
JESD-609 Code :
e1
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Supplier Device Package :
TO-220AB
Number of Terminations :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS :
Details
JEDEC-95 Code :
TO-220AB
Pulsed Drain Current-Max (IDM) :
3A
Fall Time (Typ) :
28 ns
Published :
2011
FET Type :
N-Channel
Factory Lead Time :
24 Weeks
Power Dissipation :
63W
Continuous Drain Current (ID) :
1.4A
Mount :
Through Hole
Operating Temperature :
-55°C~150°C TJ
Package / Case :
TO-220-3
Case Connection :
DRAIN
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Voltage (Vdss) :
1000V
Current - Continuous Drain (Id) @ 25°C :
1.4A Tc
Series :
Polar™
Minimum Operating Temperature :
- 55 C
Drain-source On Resistance-Max :
11 Ω
Number of Terminals :
3
Surface Mount :
No
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Manufacturer :
IXYS
Reach Compliance Code :
Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation (Max) :
63W (Tc)
Pin Count :
3
Configuration :
Single
Lead Free :
Lead Free
Drain Current-Max (Abs) (ID) :
1.4 A
Number of Channels :
1 Channel
Length :
10.66 mm
FET Feature :
--
Vgs (Max) :
±20V
Brand :
IXYS
Gate Charge (Qg) (Max) @ Vgs :
17.8nC @ 10V
Power Dissipation-Max (Abs) :
63 W
Datasheets
IXTP1R4N100P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP1R4N100P from Xinshop,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3, Number of Channels:1 Channel, IXTP1R4N100P pinout, IXTP1R4N100P datasheet PDF, IXTP1R4N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP1R4N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP1R4N100P


N-Channel Tube 11 Ω @ 500mA, 10V ±20V 450pF @ 25V 17.8nC @ 10V 1000V TO-220-3

IXTP1R4N100P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 100 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 450pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 1.4A amps.In this device, the drain-source breakdown voltage is 1kV and VGS=1kV, so the drain-source breakdown voltage is 1kV in this case.A device can conduct a maximum continuous current of [1.4 A] according to its drain current.It is [65 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 3A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 1000 V to maintain normal operation.To operate this transistor, you will need a 1000V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTP1R4N100P Features


the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 1.4A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 3A.
a 1000V drain to source voltage (Vdss)


IXTP1R4N100P Applications


There are a lot of IXYS
IXTP1R4N100P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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