IXTP2N80

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Mfr.Part #
IXTP2N80
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 800V 2A TO220AB
Stock
36,244
In Stock :
36,244

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Product Status :
Active
Avalanche Energy Rating (Eas) :
200 mJ
Current - Continuous Drain (Id) @ 25°C :
2A Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance (Ciss) (Max) @ Vds :
440pF @ 25V
Height :
9.15 mm
Supplier Device Package :
TO-220AB
Base Product Number :
IXTP2
Minimum Operating Temperature :
- 55 C
Turn-Off Delay Time :
30 ns
Terminal Position :
Single
Drain to Source Voltage (Vdss) :
800V
Packaging :
Tube
Configuration :
Single
FET Type :
N-Channel
JESD-30 Code :
R-PSFM-T3
Width :
4.82 mm
Operating Temperature :
-55°C~150°C TJ
Number of Elements :
1
Drain-source On Resistance-Max :
6.2 Ω
Brand :
IXYS
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Gate Charge (Qg) (Max) @ Vgs :
22nC @ 10V
Subcategory :
MOSFETs
Drain to Source Breakdown Voltage :
800V
RoHS Status :
ROHS3 Compliant
Transistor Application :
SWITCHING
Drain to Source Resistance :
6.2 Ω
RoHS :
Details
Continuous Drain Current (ID) :
2A
DS Breakdown Voltage-Min :
800 V
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Max Power Dissipation :
54 W
Vgs (Max) :
±20V
Rds On Max :
6.2 Ω
Package :
Tube
Drain Current-Max (Abs) (ID) :
2A
Number of Terminals :
3
Transistor Polarity :
N-Channel
Manufacturer :
IXYS
Polarity/Channel Type :
N-Channel
Power Dissipation (Max) :
54W (Tc)
Rds On (Max) @ Id, Vgs :
6.2 Ω @ 500mA, 10V
Rise Time :
18ns
Surface Mount :
No
Gate to Source Voltage (Vgs) :
20V
Pbfree Code :
yes
Qualification Status :
Not Qualified
Length :
10.66 mm
Transistor Element Material :
SILICON
Mount :
Through Hole
Number of Channels :
1 Channel
Input Capacitance :
440 pF
FET Feature :
--
Case Connection :
DRAIN
Additional Feature :
AVALANCHE RATED
Element Configuration :
Single
Channel Mode :
Enhancement
Pin Count :
3
Package Shape :
RECTANGULAR
Fall Time (Typ) :
15 ns
Mounting Type :
Through Hole
Maximum Operating Temperature :
+ 150 C
Operating Mode :
ENHANCEMENT MODE
Number of Pins :
3
Product Category :
MOSFET
JEDEC-95 Code :
TO-220AB
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Form :
THROUGH-HOLE
Product Type :
MOSFET
Number of Terminations :
3
Published :
2003
Transistor Type :
1 N-Channel
Package / Case :
TO-220-3
Pulsed Drain Current-Max (IDM) :
8A
Min Operating Temperature :
-55 °C
Series :
--
Power Dissipation :
54W
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Reach Compliance Code :
Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Max Operating Temperature :
150 °C
Power Dissipation-Max :
54W Tc
Mounting Style :
Through Hole
Datasheets
IXTP2N80
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP2N80 from Xinshop,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, Package / Case:TO-220-3, IXTP2N80 pinout, IXTP2N80 datasheet PDF, IXTP2N80 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP2N80 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP2N80


N-Channel Tube 6.2 Ω @ 500mA, 10V ±20V 440pF @ 25V 22nC @ 10V 800V TO-220-3

IXTP2N80 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 200 mJ.The maximum input capacitance of this device is 440pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 2A.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.As shown in the table below, the drain current of this device is 2A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 30 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 8A.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 6.2 Ω.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 800 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTP2N80 Features


the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 8A.
single MOSFETs transistor is 6.2 Ω
a 800V drain to source voltage (Vdss)


IXTP2N80 Applications


There are a lot of IXYS
IXTP2N80 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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