IXTP2N80P
- Mfr.Part #
- IXTP2N80P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 2A TO220AB
- Stock
- 47,581
- In Stock :
- 47,581
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 440pF @ 25V
- Package / Case :
- TO-220-3
- Factory Lead Time :
- 8 Weeks
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 30V
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 10.6nC @ 10V
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Additional Feature :
- AVALANCHE RATED
- Base Product Number :
- IXTP2
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Turn-Off Delay Time :
- 53 ns
- Series :
- PolarHV™
- Rds On (Max) @ Id, Vgs :
- 6 Ω @ 1A, 10V
- FET Feature :
- --
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2006
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 5.5V @ 50μA
- Drain Current-Max (Abs) (ID) :
- 2A
- Package Shape :
- RECTANGULAR
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Case Connection :
- DRAIN
- Product Status :
- Obsolete
- Drain to Source Breakdown Voltage :
- 800V
- Avalanche Energy Rating (Eas) :
- 100 mJ
- Continuous Drain Current (ID) :
- 2A
- Packaging :
- Tube
- JEDEC-95 Code :
- TO-220AB
- Pulsed Drain Current-Max (IDM) :
- 4A
- Terminal Position :
- Single
- Drain to Source Voltage (Vdss) :
- 800V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- Power Dissipation-Max :
- 70W Tc
- DS Breakdown Voltage-Min :
- 800 V
- Number of Terminations :
- 3
- Package :
- Tube
- Reach Compliance Code :
- Compliant
- Supplier Device Package :
- TO-220AB
- Qualification Status :
- Not Qualified
- Terminal Finish :
- Matte Tin (Sn)
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation (Max) :
- 70W (Tc)
- Terminal Form :
- THROUGH-HOLE
- Fall Time (Typ) :
- 28 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Drain-source On Resistance-Max :
- 6Ohm
- Surface Mount :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±30V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Polarity/Channel Type :
- N-Channel
- RoHS Status :
- RoHS Compliant
- FET Type :
- N-Channel
- Power Dissipation :
- 70W
- Rise Time :
- 35ns
- Mount :
- Through Hole
- Number of Terminals :
- 3
- JESD-30 Code :
- R-PSFM-T3
- Manufacturer :
- IXYS Corporation
- Datasheets
- IXTP2N80P

N-Channel Tube 6 Ω @ 1A, 10V ±30V 440pF @ 25V 10.6nC @ 10V 800V TO-220-3
IXTP2N80P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 100 mJ.A device's maximum input capacitance is 440pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 2A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=800V, and this device has a drain-to-source breakdown voltage of 800V voltage.Its drain current is 2A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 53 ns.Its maximum pulsed drain current is 4A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 800 V.To operate this transistor, you need to apply a 800V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTP2N80P Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 53 ns
based on its rated peak drain current 4A.
a 800V drain to source voltage (Vdss)
IXTP2N80P Applications
There are a lot of IXYS
IXTP2N80P applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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