IXTP300N04T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

No

Mounting Style :

Through Hole

Package Shape :

RECTANGULAR

Factory Lead Time :

17 Weeks

JEDEC-95 Code :

TO-220AB

Vgs(th) (Max) @ Id :

4V @ 250µA

Reach Compliance Code :

Compliant

Power Dissipation :

480W

Product Status :

Active

JESD-30 Code :

R-PSFM-T3

Brand :

IXYS

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Minimum Operating Temperature :

- 55 C

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 500mA, 10V

Package / Case :

TO-220-3

Series :

TrenchT2™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Number of Channels :

1 Channel

Additional Feature :

AVALANCHE RATED

Package :

Tube

JESD-609 Code :

e1

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Number of Terminations :

3

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

40V

Supplier Device Package :

TO-220AB

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

--

Current - Continuous Drain (Id) @ 25°C :

300A Tc

Manufacturer :

IXYS

Avalanche Energy Rating (Eas) :

600 mJ

Input Capacitance (Ciss) (Max) @ Vds :

10700pF @ 25V

Mounting Type :

Through Hole

Power Dissipation-Max (Abs) :

480 W

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Element Material :

SILICON

Product Type :

MOSFET

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

900A

Polarity/Channel Type :

N-Channel

Tradename :

HiPerFET

Drain Current-Max (Abs) (ID) :

300 A

Transistor Polarity :

N-Channel

Base Product Number :

IXTP300

Number of Terminals :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.0025Ohm

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

300A

Operating Temperature :

-55°C~175°C TJ

Maximum Operating Temperature :

+ 150 C

Qualification Status :

Not Qualified

Number of Elements :

1

Product Category :

MOSFET

Gate Charge (Qg) (Max) @ Vgs :

145nC @ 10V

Drain to Source Voltage (Vdss) :

40V

Mount :

Through Hole

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

RoHS :

Details

Power Dissipation-Max :

480W Tc

Power Dissipation (Max) :

480W (Tc)

Terminal Form :

THROUGH-HOLE

Channel Mode :

Enhancement

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Published :

2008