IXTP6N50D2
- Mfr.Part #
- IXTP6N50D2
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 6A TO220AB
- Stock
- 5,995
- In Stock :
- 5,995
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- Compliant
- Factory Lead Time :
- 24 Weeks
- Case Connection :
- DRAIN
- Drain to Source Voltage (Vdss) :
- 500V
- JESD-30 Code :
- R-PSFM-T3
- Product Type :
- MOSFET
- Pin Count :
- 3
- Polarity/Channel Type :
- N-Channel
- Product Category :
- MOSFET
- Rise Time :
- 72 ns
- Number of Elements :
- 1
- Transistor Polarity :
- N-Channel
- Number of Terminations :
- 3
- Terminal Form :
- THROUGH-HOLE
- Power Dissipation (Max) :
- 300W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds :
- 2800pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- TO-220AB
- Type :
- Depletion Mode MOSFET
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 6A Tc
- Power Dissipation-Max (Abs) :
- 300 W
- Mounting Style :
- Through Hole
- Qualification Status :
- Not Qualified
- Width :
- 4.83 mm
- Drive Voltage (Max Rds On, Min Rds On) :
- --
- Number of Pins :
- 3
- Package :
- Tube
- Product Status :
- Active
- RoHS :
- Details
- FET Type :
- N-Channel
- Manufacturer :
- IXYS
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 500m Ω @ 3A, 0V
- Brand :
- IXYS
- Channel Mode :
- Depletion
- Terminal Position :
- Single
- Minimum Operating Temperature :
- - 55 C
- Published :
- 2011
- Height :
- 16 mm
- Number of Channels :
- 1 Channel
- Operating Mode :
- Depletion Mode
- Package / Case :
- TO-220-3
- Number of Terminals :
- 3
- Series :
- --
- JEDEC-95 Code :
- TO-220AB
- Gate Charge (Qg) (Max) @ Vgs :
- 96nC @ 5V
- Vgs(th) (Max) @ Id :
- --
- Operating Temperature :
- -55°C~150°C TJ
- Additional Feature :
- UL RECOGNIZED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max :
- 300W Tc
- Drain-source On Resistance-Max :
- 0.5Ohm
- Maximum Operating Temperature :
- + 150 C
- Length :
- 10.66 mm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Continuous Drain Current (ID) :
- 6A
- Base Product Number :
- IXTP6
- Transistor Type :
- 1 N-Channel
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Surface Mount :
- No
- FET Feature :
- Depletion Mode
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Vgs (Max) :
- ±20V
- Transistor Application :
- AMPLIFIER
- Transistor Element Material :
- SILICON
- Package Shape :
- RECTANGULAR
- Datasheets
- IXTP6N50D2

N-Channel Tube 500m Ω @ 3A, 0V ±20V 2800pF @ 25V 96nC @ 5V 500V TO-220-3
IXTP6N50D2 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2800pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 6A. Operating this transistor requires a 500V drain to source voltage (Vdss).
IXTP6N50D2 Features
a continuous drain current (ID) of 6A
a 500V drain to source voltage (Vdss)
IXTP6N50D2 Applications
There are a lot of IXYS
IXTP6N50D2 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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