IXTQ470P2

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Mfr.Part #
IXTQ470P2
Manufacturer
Littelfuse
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 500V 42A TO3P
Stock
13,494
In Stock :
13,494

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Product Category :
MOSFET
Operating Temperature :
-55°C~150°C TJ
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Qualification Status :
Not Qualified
FET Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Series :
PolarP2™
Case Connection :
DRAIN
Operating Mode :
ENHANCEMENT MODE
Pin Count :
3
JESD-30 Code :
R-PSFM-T3
Supplier Device Package :
TO-3P
Pulsed Drain Current-Max (IDM) :
126A
Power Dissipation :
830W
Continuous Drain Current (ID) :
42A
Packaging :
Tube
Power Dissipation-Max (Abs) :
830 W
Transistor Element Material :
SILICON
Package Shape :
RECTANGULAR
Package / Case :
TO-3P-3, SC-65-3
Mounting Type :
Through Hole
Terminal Form :
THROUGH-HOLE
FET Feature :
--
Transistor Application :
SWITCHING
Number of Terminals :
3
Drain-source On Resistance-Max :
0.145Ohm
Product Type :
MOSFET
Reach Compliance Code :
Compliant
RoHS :
Details
Power Dissipation-Max :
830W Tc
Gate Charge (Qg) (Max) @ Vgs :
88nC @ 10V
Pbfree Code :
yes
Terminal Position :
Single
Current - Continuous Drain (Id) @ 25°C :
42A Tc
Number of Elements :
1
Package :
Tube
Published :
2010
Mounting Style :
Through Hole
Rds On (Max) @ Id, Vgs :
145m Ω @ 500mA, 10V
Tradename :
Polar2 HiPerFET
Avalanche Energy Rating (Eas) :
1300 mJ
Polarity/Channel Type :
N-Channel
Drain to Source Voltage (Vdss) :
500V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Type :
PolarP2 Power MOSFET
Vgs (Max) :
±30V
Lead Free :
Lead Free
Base Product Number :
IXTQ470
Surface Mount :
No
Number of Terminations :
3
Drain Current-Max (Abs) (ID) :
42 A
Terminal Finish :
Pure Tin (Sn)
Number of Channels :
1 Channel
DS Breakdown Voltage-Min :
500 V
Brand :
IXYS
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Transistor Type :
1 N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate to Source Voltage (Vgs) :
30V
Power Dissipation (Max) :
830W (Tc)
Transistor Polarity :
N-Channel
Minimum Operating Temperature :
- 55 C
Factory Lead Time :
24 Weeks
RoHS Status :
ROHS3 Compliant
Manufacturer :
IXYS
Drain to Source Breakdown Voltage :
500V
Maximum Operating Temperature :
+ 150 C
Element Configuration :
Single
Product Status :
Active
Input Capacitance (Ciss) (Max) @ Vds :
5400pF @ 25V
Mount :
Through Hole
Configuration :
Single
Additional Feature :
AVALANCHE RATED
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Datasheets
IXTQ470P2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTQ470P2 from Xinshop,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-3P-3, SC-65-3, Mounting Type:Through Hole, Type:PolarP2 Power MOSFET, Number of Terminations:3, Number of Channels:1 Channel, IXTQ470P2 pinout, IXTQ470P2 datasheet PDF, IXTQ470P2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTQ470P2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTQ470P2


N-Channel Tube 145m Ω @ 500mA, 10V ±30V 5400pF @ 25V 88nC @ 10V 500V TO-3P-3, SC-65-3

IXTQ470P2 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1300 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5400pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 42A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.42 A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 126A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTQ470P2 Features


the avalanche energy rating (Eas) is 1300 mJ
a continuous drain current (ID) of 42A
a drain-to-source breakdown voltage of 500V voltage
based on its rated peak drain current 126A.
a 500V drain to source voltage (Vdss)


IXTQ470P2 Applications


There are a lot of IXYS
IXTQ470P2 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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