IXTT02N450HV

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Turn-Off Delay Time :

28 ns

JESD-609 Code :

e3

Package :

Tube

DS Breakdown Voltage-Min :

4500 V

FET Feature :

--

Power Dissipation (Max) :

113W (Tc)

RoHS :

Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

24 Weeks

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Number of Terminations :

2

Vgs(th) (Max) @ Id :

6.5V @ 250μA

Fall Time (Typ) :

143 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Supplier Device Package :

TO-268

Reach Compliance Code :

not_compliant

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

10.4nC @ 10V

Product Status :

Active

Terminal Position :

Single

Drain-source On Resistance-Max :

625Ohm

Manufacturer :

IXYS

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Surface Mount :

yes

Channel Mode :

Enhancement

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Pulsed Drain Current-Max (IDM) :

0.6A

Input Capacitance :

256 pF

Rise Time :

48ns

Transistor Type :

1 N-Channel

Vgs (Max) :

±20V

Packaging :

Tube

Min Operating Temperature :

-55 °C

Transistor Element Material :

SILICON

Maximum Operating Temperature :

+ 150 C

Max Operating Temperature :

150 °C

Product Category :

MOSFET

Polarity/Channel Type :

N-Channel

Minimum Operating Temperature :

- 55 C

Brand :

IXYS

Input Capacitance (Ciss) (Max) @ Vds :

256pF @ 25V

Case Connection :

DRAIN

Transistor Polarity :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

113W Tc

JESD-30 Code :

R-PSSO-G2

Max Power Dissipation :

113 W

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Number of Terminals :

2

Configuration :

Single

Published :

2012

Power Dissipation :

113W

Drain to Source Breakdown Voltage :

4.5kV

Drain Current-Max (Abs) (ID) :

0.2A

Current - Continuous Drain (Id) @ 25°C :

200mA Tc

Rds On Max :

750 Ω

Mounting Style :

SMD/SMT

Number of Channels :

1 Channel

Drain to Source Voltage (Vdss) :

4500V

Rds On (Max) @ Id, Vgs :

750 Ω @ 10mA, 10V

Product Type :

MOSFET

Drain to Source Resistance :

750 Ω

JEDEC-95 Code :

TO-268AA

Base Product Number :

IXTT02

Terminal Form :

Gull wing

Series :

--

FET Type :

N-Channel

Power Dissipation-Max (Abs) :

113 W

Package Shape :

RECTANGULAR

Continuous Drain Current (ID) :

200mA

Element Configuration :

Single