J309

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - RF

Drain to Source Breakdown Voltage :

25V

Terminal Finish :

Tin/Lead (Sn/Pb)

Time@Peak Reflow Temperature-Max (s) :

30

Feedback Cap-Max (Crss) :

2.5 pF

Height :

5.33mm

Mount :

Through Hole

Max Operating Temperature :

150°C

Gain :

16dB

Pin Count :

3

Power Dissipation :

350mW

Voltage - Test :

10V

HTS Code :

8541.21.00.75

Transistor Application :

AMPLIFIER

Packaging :

Bulk

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Base Part Number :

J309

Pbfree Code :

No

RoHS Status :

Non-RoHS Compliant

Weight :

201mg

Continuous Drain Current (ID) :

30mA

Breakdown Voltage :

-25V

Gate to Source Voltage (Vgs) :

-25V

Current Rating :

10mA

Operating Mode :

Depletion Mode

Transistor Type :

N-Channel JFET

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Max Power Dissipation :

625mW

Noise Figure :

3 dB

Width :

4.19mm

Lead Free :

Lead Free

Number of Terminations :

3

Min Operating Temperature :

-55°C

Element Configuration :

Single

FET Technology :

JUNCTION

Terminal Position :

BOTTOM

Radiation Hardening :

No

JESD-609 Code :

e0

Number of Pins :

3

Frequency :

100MHz

Length :

5.2mm

Current - Test :

10mA

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

REACH SVHC :

No SVHC

Voltage - Rated DC :

25V

Peak Reflow Temperature (Cel) :

240

Termination :

Through Hole

Drain to Source Voltage (Vdss) :

25V