MS1337

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Collector-Base Capacitance-Max :

120pF

Terminal Finish :

TIN LEAD

Operating Temperature :

200°C TJ

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

M113

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Number of Pins :

4

Additional Feature :

WITH EMITTER BALLASTING RESISTORS

Power - Max :

70W

RoHS Status :

RoHS Compliant

Gain :

10dB

JESD-609 Code :

e0

Highest Frequency Band :

VERY HIGH FREQUENCY B

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

18V

Published :

2002

Number of Terminations :

4

Mounting Type :

Chassis Mount

ECCN Code :

EAR99

Frequency - Transition :

175MHz

Configuration :

Single

Max Power Dissipation :

70W

Mount :

Chassis Mount, Screw

Polarity/Channel Type :

NPN

Max Collector Current :

8A

Collector Emitter Breakdown Voltage :

18V

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 250mA 5V

Collector Base Voltage (VCBO) :

36V

Transistor Application :

AMPLIFIER

Packaging :

Bulk

Pin Count :

4

Terminal Form :

Flat

Terminal Position :

Radial

Radiation Hardening :

No

Pbfree Code :

No

Transistor Type :

NPN