NDB6030PL

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

25mOhm

Height :

11.33mm

Length :

10.67mm

Drain to Source Breakdown Voltage :

-30V

Turn On Delay Time :

12.5 ns

Pbfree Code :

yes

Width :

4.83mm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Radiation Hardening :

No

JESD-609 Code :

e3

Vgs (Max) :

±16V

Power Dissipation-Max :

75W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

P-Channel

Operating Temperature :

-65°C~175°C TJ

RoHS Status :

RoHS Compliant

Weight :

1.31247g

Drain to Source Voltage (Vdss) :

30V

Published :

1997

Transistor Element Material :

SILICON

Voltage - Rated DC :

-30V

Continuous Drain Current (ID) :

-30A

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

16V

Turn-Off Delay Time :

50 ns

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 5V

Vgs(th) (Max) @ Id :

2V @ 250μA

Transistor Application :

SWITCHING

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

25m Ω @ 19A, 10V

Fall Time (Typ) :

52 ns

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Mount :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

90A

Current Rating :

-30A

Contact Plating :

Tin

Rise Time :

60ns

Input Capacitance (Ciss) (Max) @ Vds :

1570pF @ 15V

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Power Dissipation :

75W

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 3 days ago)

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)