NDS0605
- Mfr.Part #
- NDS0605
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 180MA SOT-23
- Stock
- 9,908
- In Stock :
- 9,908
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Rise Time :
- 6.3ns
- Turn-Off Delay Time :
- 20 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 2.5nC @ 10V
- Width :
- 3.05mm
- Dual Supply Voltage :
- -60V
- Rds On (Max) @ Id, Vgs :
- 5 Ω @ 500mA, 10V
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- Fall Time (Typ) :
- 6.3 ns
- Number of Pins :
- 3
- Published :
- 2002
- Continuous Drain Current (ID) :
- 180mA
- ECCN Code :
- EAR99
- Number of Channels :
- 1
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- Max Junction Temperature (Tj) :
- 150°C
- Threshold Voltage :
- -1.7V
- Height :
- 1.2mm
- Operating Temperature :
- -55°C~150°C TJ
- Voltage - Rated DC :
- -60V
- Input Capacitance (Ciss) (Max) @ Vds :
- 79pF @ 25V
- Drain to Source Breakdown Voltage :
- -60V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Operating Mode :
- ENHANCEMENT MODE
- Contact Plating :
- Tin
- Turn On Delay Time :
- 5 ns
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 360mW Ta
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Resistance :
- 5Ohm
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Nominal Vgs :
- -1.7 V
- Drain to Source Voltage (Vdss) :
- 60V
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- P-Channel
- Power Dissipation :
- 360mW
- Current Rating :
- -180mA
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 180mA Ta
- Feedback Cap-Max (Crss) :
- 5 pF
- Length :
- 2.92mm
- Factory Lead Time :
- 8 Weeks
- Weight :
- 30mg
- Datasheets
- NDS0605

P-Channel Tape & Reel (TR) 5 Ω @ 500mA, 10V ±20V 79pF @ 25V 2.5nC @ 10V 60V TO-236-3, SC-59, SOT-23-3
NDS0605 Description
ON Semiconductor's patented, high-cell-density DMOS technology is used to make NDS0605 P-Channel enhancement mode field effect transistors. This high-density method was created to reduce on-state resistance, provide durable and reliable performance, and allow for quick switching. They can be utilized in most applications requiring up to 180mA DC and can deliver current up to 1A with minimal effort. The NDS0605 is ideal for low-voltage applications that require a low-current high-side switch, according to NDS0605 datasheet.
NDS0605 Features
-
High saturation current
-
High density cell design for low RDS(ON)
-
?0.18A, ?60V. RDS(ON) = 5 ? @ VGS = ?10 V
-
Voltage controlled p-channel small signal switch
NDS0605 Applications
-
Load Switching
-
DC/DC converter
-
DC motor control
-
Battery protection
-
Power management control
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