NDS9936

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

50m Ω @ 5A, 10V

FET Feature :

Logic Level Gate

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

525pF @ 15V

FET Type :

2 N-Channel (Dual)

Pin Count :

8

Number of Elements :

2

Current - Continuous Drain (Id) @ 25°C :

5A

Pulsed Drain Current-Max (IDM) :

40A

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Power - Max :

900mW

Drain Current-Max (Abs) (ID) :

5A

Qualification Status :

COMMERCIAL

Number of Terminations :

8

JESD-609 Code :

e3

Terminal Finish :

MATTE TIN

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

3V @ 250µA

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

30V

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.05Ohm

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-G8

Transistor Application :

SWITCHING

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mounting Type :

Surface Mount