NDS9952A
- Mfr.Part #
- NDS9952A
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 3
- Stock
- 48,803
- In Stock :
- 48,803
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Fall Time (Typ) :
- 8 ns
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 2.8V @ 250μA
- Current - Continuous Drain (Id) @ 25°C :
- 3.7A 2.9A
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Polarity/Channel Type :
- N-CHANNEL AND P-CHANNEL
- Rds On (Max) @ Id, Vgs :
- 80m Ω @ 1A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 21 ns
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 320pF @ 10V
- Termination :
- SMD/SMT
- FET Type :
- N and P-Channel
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Pulsed Drain Current-Max (IDM) :
- 15A
- Drain to Source Breakdown Voltage :
- 30V
- Number of Terminations :
- 8
- Current Rating :
- 2.9A
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Threshold Voltage :
- 1.7V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- Gull wing
- Power Dissipation :
- 2W
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Number of Pins :
- 8
- Operating Mode :
- ENHANCEMENT MODE
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JESD-609 Code :
- e3
- FET Feature :
- Logic Level Gate
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Rise Time :
- 21ns
- Factory Lead Time :
- 18 Weeks
- Element Configuration :
- Dual
- Max Power Dissipation :
- 900mW
- Resistance :
- 80mOhm
- Weight :
- 230.4mg
- Continuous Drain Current (ID) :
- 3.7A
- Dual Supply Voltage :
- 30V
- Nominal Vgs :
- 1.7 V
- Number of Elements :
- 2
- Datasheets
- NDS9952A

NDS9952A datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
NDS9952A Description
These dual N- and P-channel enhancement mode power field effect transistors are made utilizing a high cell density DMOS process that is exclusive to ON Semiconductors. In the avalanche and commutation modes, this very high density technology is specifically designed to decrease on-state resistance, offer improved switching performance, and withstand high energy pulses. These components are especially well suited for low voltage applications like battery powered circuits and laptop computer power management, which require quick switching, little in-line power loss, and transient resistance.
NDS9952A Features
-
N-Channel 3.7 A, 30 V, RDS(ON) = 0.08 W @ VGS = 10 V.
-
P-Channel: 2.9A, -30V, 0.13W at -10V for RDS(ON).
-
High density cell architecture or a very low RDS (ON).
-
a surface mount package with high power and current handling capacity.
-
Surface-mount MOSFET with dual (N and P) channels.
NDS9952A Applications
Switching applications
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