NP100P04PDG-E1-AY
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- Mfr.Part #
- NP100P04PDG-E1-AY
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 100A TO263
- Stock
- 11,118
- In Stock ：
- 11,118
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 40V
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Lead Free :
- Lead Free
- Avalanche Energy Rating (Eas) :
- 550 mJ
- Fall Time (Typ) :
- 100 ns
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 175°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- ECCN Code :
- EAR99
- Number of Terminations :
- 2
- Turn-Off Delay Time :
- 300 ns
- Factory Lead Time :
- 16 Weeks
- Published :
- 2007
- Pulsed Drain Current-Max (IDM) :
- 300A
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- Power Dissipation-Max :
- 1.8W Ta 200W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 15100pF @ 10V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Mounting Type :
- Surface Mount
- Rise Time :
- 30ns
- Terminal Position :
- Single
- Turn On Delay Time :
- 38 ns
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- FET Type :
- P-Channel
- DS Breakdown Voltage-Min :
- 40V
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 320nC @ 10V
- JESD-30 Code :
- R-PSSO-G2
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 1.8W
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 100A
- Rds On (Max) @ Id, Vgs :
- 3.5m Ω @ 50A, 10V
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Datasheets
- NP100P04PDG-E1-AY
P-Channel Tape & Reel (TR) 3.5m Ω @ 50A, 10V ±20V 15100pF @ 10V 320nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NP100P04PDG-E1-AY Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 550 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 15100pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 300 ns.Peak drain current is 300A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 38 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 40V.For this transistor to work, a voltage 40V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
NP100P04PDG-E1-AY Features
the avalanche energy rating (Eas) is 550 mJ
a continuous drain current (ID) of 100A
the turn-off delay time is 300 ns
based on its rated peak drain current 300A.
a 40V drain to source voltage (Vdss)
NP100P04PDG-E1-AY Applications
There are a lot of Renesas Electronics America
NP100P04PDG-E1-AY applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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