PD85025-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Base Part Number :

PD85025

Polarity/Channel Type :

N-Channel

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

40V

Number of Pins :

3

Max Output Power :

30W

Case Connection :

SOURCE

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Max Power Dissipation :

79W

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

7A

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

Matte Tin (Sn)

Mount :

Surface Mount

Power Dissipation :

79W

Voltage - Test :

13.6V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Min Operating Temperature :

-65°C

Max Operating Temperature :

165°C

Terminal Position :

Dual

Lead Free :

Lead Free

Factory Lead Time :

25 Weeks

Packaging :

Tube

Pin Count :

10

Drain to Source Breakdown Voltage :

40V

Reach Compliance Code :

not_compliant

Current - Test :

300mA

Gain :

17.3dB

Power - Output :

10W

Terminal Form :

Gull wing

JESD-30 Code :

R-PDSO-G2

Drain Current-Max (Abs) (ID) :

7A

Number of Elements :

1

Transistor Application :

AMPLIFIER

Current Rating :

7A

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Gate to Source Voltage (Vgs) :

15V

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Number of Terminations :

2

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

250

Transistor Type :

LDMOS

Frequency :

870MHz