PSMN004-36B,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Number of Terminations :

2

DS Breakdown Voltage-Min :

36V

Input Capacitance (Ciss) (Max) @ Vds :

6000pF @ 20V

Number of Elements :

1

Published :

2001

FET Type :

N-Channel

Case Connection :

DRAIN

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

75A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

97nC @ 5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

Unknown

Drain-source On Resistance-Max :

0.0054Ohm

Surface Mount :

yes

Vgs(th) (Max) @ Id :

2V @ 1mA

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

4m Ω @ 25A, 10V

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

120 mJ

Transistor Element Material :

SILICON

Additional Feature :

LOGIC LEVEL COMPATIBLE

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

230W Tc

Terminal Finish :

Tin (Sn)

Drain to Source Voltage (Vdss) :

36V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Position :

Single

Qualification Status :

Not Qualified

Vgs (Max) :

±15V

Pulsed Drain Current-Max (IDM) :

240A

Series :

TrenchMOS™

Pin Count :

3