RQ3E080BNTB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

32A

Continuous Drain Current (ID) :

8A

Current - Continuous Drain (Id) @ 25°C :

8A Ta

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

14.5nC @ 10V

Published :

2014

Mounting Type :

Surface Mount

Number of Terminations :

5

Power Dissipation-Max :

2W Ta

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-PowerVDFN

DS Breakdown Voltage-Min :

30V

Drain Current-Max (Abs) (ID) :

8A

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.022Ohm

ECCN Code :

EAR99

Factory Lead Time :

20 Weeks

Drain to Source Voltage (Vdss) :

30V

Operating Temperature :

150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Terminal Form :

Flat

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-F5

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 15V

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

15.2m Ω @ 8A, 10V

Packaging :

Cut Tape (CT)

Reach Compliance Code :

not_compliant

Case Connection :

DRAIN

Lead Free :

Lead Free

Mount :

Surface Mount

FET Type :

N-Channel