RTM002P02T2L
- Mfr.Part #
- RTM002P02T2L
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 200MA VMT3
- Stock
- 17,534
- In Stock :
- 17,534
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Current Rating :
- -200mA
- Turn-Off Delay Time :
- 35 ns
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Mount :
- Surface Mount
- Pin Count :
- 3
- Package / Case :
- SOT-723
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±12V
- Transistor Element Material :
- SILICON
- Turn On Delay Time :
- 9 ns
- Rds On (Max) @ Id, Vgs :
- 1.5 Ω @ 200mA, 4.5V
- Rise Time :
- 6ns
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Published :
- 2006
- Continuous Drain Current (ID) :
- 200mA
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 10V
- Peak Reflow Temperature (Cel) :
- 260
- Current - Continuous Drain (Id) @ 25°C :
- 200mA Ta
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Transistor Application :
- SWITCHING
- Resistance :
- 1.5Ohm
- Lead Free :
- Lead Free
- Threshold Voltage :
- -700mV
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- -20V
- FET Type :
- P-Channel
- Terminal Form :
- Flat
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Fall Time (Typ) :
- 6 ns
- Nominal Vgs :
- -700 mV
- ECCN Code :
- EAR99
- Drain to Source Voltage (Vdss) :
- 20V
- Power Dissipation-Max :
- 150mW Ta
- Drain to Source Breakdown Voltage :
- -20V
- Pbfree Code :
- yes
- Drain Current-Max (Abs) (ID) :
- 0.2A
- Power Dissipation :
- 150mW
- Gate to Source Voltage (Vgs) :
- 12V
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- Dual
- Datasheets
- RTM002P02T2L

P-Channel Tape & Reel (TR) 1.5 Ω @ 200mA, 4.5V ±12V 50pF @ 10V 20V SOT-723
RTM002P02T2L Overview
A device's maximum input capacitance is 50pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 200mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-20V, and this device has a drain-to-source breakdown voltage of -20V voltage.Its drain current is 0.2A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 35 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of -700mV.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (2.5V 4.5V) to reduce its overall power consumption.
RTM002P02T2L Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 35 ns
a threshold voltage of -700mV
a 20V drain to source voltage (Vdss)
RTM002P02T2L Applications
There are a lot of ROHM Semiconductor
RTM002P02T2L applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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