SBAS16LT1G
- Mfr.Part #
- SBAS16LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- DIODE GP 100V 200MA SOT23-3
- Stock
- 28,800
- In Stock :
- 28,800
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- Manufacturer :
- onsemi
- Product Category :
- Diodes - Rectifiers - Single
- Operating Temperature - Junction :
- -55°C~150°C
- Radiation Hardening :
- No
- Surface Mount :
- yes
- Power Dissipation :
- 300mW
- Pbfree Code :
- yes
- HTS Code :
- 8541.10.00.70
- Diode Type :
- Standard
- Packaging :
- Tape and Reel (TR)
- Recovery Time :
- 6 ns
- Voltage - Forward (Vf) (Max) @ If :
- 1.25V @ 150mA
- Forward Voltage :
- 1.25V
- Width :
- 4.5mm
- Current - Average Rectified (Io) :
- 200mA DC
- Base Part Number :
- BAS16
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Halogen Free :
- Halogen Free
- Min Operating Temperature :
- -55°C
- Max Reverse Voltage (DC) :
- 75V
- JESD-609 Code :
- e3
- Reverse Recovery Time :
- 6 ns
- Average Rectified Current :
- 200mA
- Height :
- 1.01mm
- Max Power Dissipation :
- 300mW
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Speed :
- Small Signal =< 200mA (Io), Any Speed
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Voltage - DC Reverse (Vr) (Max) :
- 100V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Terminations :
- 3
- Factory Lead Time :
- 4 Weeks
- Current - Reverse Leakage @ Vr :
- 1μA @ 100V
- Pin Count :
- 3
- Terminal Finish :
- Tin (Sn)
- Diode Element Material :
- SILICON
- Number of Pins :
- 3
- Forward Current :
- 200mA
- Max Repetitive Reverse Voltage (Vrrm) :
- 75V
- Number of Elements :
- 1
- Published :
- 2013
- Max Reverse Leakage Current :
- 50μA
- Capacitance @ Vr, F :
- 2pF @ 0V 1MHz
- Max Operating Temperature :
- 150°C
- Series :
- Automotive, AEC-Q101
- Max Surge Current :
- 500mA
- Length :
- 3.04mm
- Element Configuration :
- Single
- Output Current-Max :
- 0.2A
- Peak Reverse Current :
- 1μA
- Terminal Position :
- Dual
- Datasheets
- SBAS16LT1G

Standard Diode Rectifier Small Signal =< 200mA (Io), Any Speed 1.25V @ 150mA -55°C~150°C 1μA @ 100V 3-Termination Tape & Reel (TR) TO-236-3, SC-59, SOT-23-3 Surface Mount
SBAS16LT1G Overview
Phase diode rectifier produces a maximum reverse leakage current of 50μA volts.As a result, this device has a rectified current of 200mA volts on average.A device like this produces no heat as a secondary effect of its primary operation.Phase diode rectifier is permissible for forward current to reach 200mA.300mW heat is lost most efficiently by electronic or electrical devices.There is no maximum value for 500mA surge current.Using the output current as an example, 0.2A is the maximum value.Based on the data charts in the datasheets, the peak reverse is 1μA.
SBAS16LT1G Features
a maximal reverse leakage current of 50μA volts
an average rectified current of 200mA volts
the least amount of 300mW heat (energy loss)
0.2A is the maximum value
the peak reverse is 1μA
SBAS16LT1G Applications
There are a lot of ON Semiconductor
SBAS16LT1G applications of single-phase diode rectifier.
- DC motor control and drives
- Battery chargers
- Welders
- Power converters
- Reverse Polarity Protection
- Ultra High-Speed Switching
- Freewheeling
- Polarity Protection Diode
- Recirculating Diode
- Switching Diode
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