STS25NH3LL-E
- Mfr.Part #
- STS25NH3LL-E
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 25A 8SO
- Stock
- 14,631
- In Stock :
- 14,631
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Operating Temperature :
- 175°C
- Rise Time :
- 50ns
- Drain to Source Voltage (Vdss) :
- 30V
- Mount :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 3.5mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Turn-Off Delay Time :
- 75 ns
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Input Capacitance (Ciss) (Max) @ Vds :
- 4450pF @ 25V
- Fall Time (Typ) :
- 8 ns
- Supplier Device Package :
- 8-SO
- Current - Continuous Drain (Id) @ 25°C :
- 25A Tc
- Number of Pins :
- 8
- Power Dissipation-Max :
- 3.2W Tc
- Input Capacitance :
- 4.45nF
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 30V
- Current Rating :
- 25A
- Drain to Source Resistance :
- 3.2mOhm
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 18V
- Mounting Type :
- Surface Mount
- Min Operating Temperature :
- -55°C
- Rds On Max :
- 3.5 mΩ
- Continuous Drain Current (ID) :
- 25A
- Drain to Source Breakdown Voltage :
- 30V
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 4.5V
- Vgs (Max) :
- ±18V
- Operating Temperature :
- -55°C~175°C TJ
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 3.2W
- Series :
- STripFET™ III
- Datasheets
- STS25NH3LL-E

N-Channel Tape & Reel (TR) 3.5mOhm @ 12.5A, 10V ±18V 4450pF @ 25V 40nC @ 4.5V 30V 8-SOIC (0.154, 3.90mm Width)
STS25NH3LL-E Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4450pF @ 25V.This device has a continuous drain current (ID) of [25A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.MOSFETs have 3.2mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 18V volts.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
STS25NH3LL-E Features
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 75 ns
single MOSFETs transistor is 3.2mOhm
a 30V drain to source voltage (Vdss)
STS25NH3LL-E Applications
There are a lot of STMicroelectronics
STS25NH3LL-E applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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