TK1K9A60F,S4X
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- Mfr.Part #
- TK1K9A60F,S4X
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 3.7A TO220SIS
- Stock
- 30
- In Stock ：
- 30
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- 150°C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±30V
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4V @ 400μA
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Published :
- 2017
- Factory Lead Time :
- 12 Weeks
- Packaging :
- Tube
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- Series :
- U-MOSIX
- Package / Case :
- TO-220-3 Full Pack
- Power Dissipation-Max :
- 30W Tc
- Drain to Source Voltage (Vdss) :
- 600V
- Input Capacitance (Ciss) (Max) @ Vds :
- 490pF @ 300V
- Rds On (Max) @ Id, Vgs :
- 1.9 Ω @ 1.9A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 3.7A Ta
- RoHS Status :
- RoHS Compliant
- Datasheets
- TK1K9A60F,S4X
N-Channel Tube 1.9 Ω @ 1.9A, 10V ±30V 490pF @ 300V 14nC @ 10V 600V TO-220-3 Full Pack
TK1K9A60F,S4X Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 490pF @ 300V.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
TK1K9A60F,S4X Features
a 600V drain to source voltage (Vdss)
TK1K9A60F,S4X Applications
There are a lot of Toshiba Semiconductor and Storage
TK1K9A60F,S4X applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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