TN0200K-T1-E3

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Mfr.Part #
TN0200K-T1-E3
Manufacturer
Vishay
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET N-CH 20V SOT23-3
Stock
1,303
In Stock :
1,303

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Published :
2009
Pin Count :
3
Length :
3.0226mm
Threshold Voltage :
600mV
Operating Mode :
ENHANCEMENT MODE
Turn-Off Delay Time :
55 ns
Radiation Hardening :
No
Nominal Vgs :
600 mV
Number of Elements :
1
Transistor Application :
SWITCHING
RoHS Status :
ROHS3 Compliant
Vgs(th) (Max) @ Id :
1V @ 50μA
Gate to Source Voltage (Vgs) :
8V
Max Power Dissipation :
350mW
Height :
1.016mm
Element Configuration :
Single
Mount :
Surface Mount
REACH SVHC :
Unknown
Series :
TrenchFET®
ECCN Code :
EAR99
Max Operating Temperature :
150°C
Time@Peak Reflow Temperature-Max (s) :
30
Terminal Form :
Gull wing
Drain to Source Breakdown Voltage :
20V
Turn On Delay Time :
17 ns
Resistance :
400mOhm
Termination :
SMD/SMT
Rise Time :
20ns
Power Dissipation :
350mW
Number of Pins :
3
Terminal Position :
Dual
Package / Case :
TO-236-3, SC-59, SOT-23-3
Width :
3.05mm
Mounting Type :
Surface Mount
FET Type :
N-Channel
Packaging :
Cut Tape (CT)
Min Operating Temperature :
-55°C
Additional Feature :
LOGIC LEVEL COMPATIBLE
Number of Terminations :
3
Pbfree Code :
yes
Contact Plating :
Tin
JESD-609 Code :
e3
Peak Reflow Temperature (Cel) :
260
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Drain Current (ID) :
730mA
Rds On (Max) @ Id, Vgs :
400m Ω @ 600mA, 4.5V
Voltage :
20V
Current :
12A
Lead Free :
Lead Free
Fall Time (Typ) :
20 ns
Gate Charge (Qg) (Max) @ Vgs :
2nC @ 4.5V
Datasheets
TN0200K-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay TN0200K-T1-E3 from Xinshop,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-236-3, SC-59, SOT-23-3, Mounting Type:Surface Mount, Number of Terminations:3, Voltage:20V, TN0200K-T1-E3 pinout, TN0200K-T1-E3 datasheet PDF, TN0200K-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay TN0200K-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay TN0200K-T1-E3


N-Channel Cut Tape (CT) 400m Ω @ 600mA, 4.5V 2nC @ 4.5V TO-236-3, SC-59, SOT-23-3

TN0200K-T1-E3 Overview


Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 730mA.When VGS=20V, and ID flows to VDS at 20VVDS, the drain-source breakdown voltage is 20V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 55 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 17 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 600mV volts, which indicates that a transistor is ready to perform any of its operations at that voltage.

TN0200K-T1-E3 Features


a continuous drain current (ID) of 730mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 55 ns
a threshold voltage of 600mV


TN0200K-T1-E3 Applications


There are a lot of Vishay Siliconix
TN0200K-T1-E3 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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