TN0200K-T1-E3
- Mfr.Part #
- TN0200K-T1-E3
- Manufacturer
- Vishay
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 20V SOT23-3
- Stock
- 1,303
- In Stock :
- 1,303
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2009
- Pin Count :
- 3
- Length :
- 3.0226mm
- Threshold Voltage :
- 600mV
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 55 ns
- Radiation Hardening :
- No
- Nominal Vgs :
- 600 mV
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 1V @ 50μA
- Gate to Source Voltage (Vgs) :
- 8V
- Max Power Dissipation :
- 350mW
- Height :
- 1.016mm
- Element Configuration :
- Single
- Mount :
- Surface Mount
- REACH SVHC :
- Unknown
- Series :
- TrenchFET®
- ECCN Code :
- EAR99
- Max Operating Temperature :
- 150°C
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Form :
- Gull wing
- Drain to Source Breakdown Voltage :
- 20V
- Turn On Delay Time :
- 17 ns
- Resistance :
- 400mOhm
- Termination :
- SMD/SMT
- Rise Time :
- 20ns
- Power Dissipation :
- 350mW
- Number of Pins :
- 3
- Terminal Position :
- Dual
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Width :
- 3.05mm
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Packaging :
- Cut Tape (CT)
- Min Operating Temperature :
- -55°C
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Contact Plating :
- Tin
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 730mA
- Rds On (Max) @ Id, Vgs :
- 400m Ω @ 600mA, 4.5V
- Voltage :
- 20V
- Current :
- 12A
- Lead Free :
- Lead Free
- Fall Time (Typ) :
- 20 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 2nC @ 4.5V
- Datasheets
- TN0200K-T1-E3

N-Channel Cut Tape (CT) 400m Ω @ 600mA, 4.5V 2nC @ 4.5V TO-236-3, SC-59, SOT-23-3
TN0200K-T1-E3 Overview
Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 730mA.When VGS=20V, and ID flows to VDS at 20VVDS, the drain-source breakdown voltage is 20V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 55 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 17 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 600mV volts, which indicates that a transistor is ready to perform any of its operations at that voltage.
TN0200K-T1-E3 Features
a continuous drain current (ID) of 730mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 55 ns
a threshold voltage of 600mV
TN0200K-T1-E3 Applications
There are a lot of Vishay Siliconix
TN0200K-T1-E3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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