TP2635N3-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

Terminal Finish :

Matte Tin (Sn)

Rds On (Max) @ Id, Vgs :

15 Ω @ 300mA, 10V

Current - Continuous Drain (Id) @ 25°C :

180mA Tj

Manufacturer :

Microchip

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Power Dissipation-Max :

1W Ta

Weight :

453.59237mg

Brand :

Microchip Technology

Supplier Device Package :

TO-92-3

Power Dissipation (Max) :

1W (Ta)

Turn On Delay Time :

10 ns

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

350V

FET Type :

P-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2013

Number of Elements :

1

Mounting Style :

Through Hole

Product Status :

Active

RoHS Status :

ROHS3 Compliant

Type :

FET

Base Product Number :

TP2635

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Packaging :

Bulk

Height :

5.33mm

Peak Reflow Temperature (Cel) :

Not Applicable

Channel Mode :

Enhancement

Continuous Drain Current (ID) :

-180mA

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

1W

Terminal Position :

BOTTOM

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Vgs (Max) :

±20V

Number of Terminations :

3

Product Category :

MOSFET

FET Feature :

--

Configuration :

Single

Element Configuration :

Single

Package :

Bag

Rise Time :

15ns

Minimum Operating Temperature :

- 55 C

Transistor Polarity :

P-Channel

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 25V

Fall Time (Typ) :

40 ns

Maximum Operating Temperature :

+ 150 C

Series :

--

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Product Type :

MOSFET

Length :

5.21mm

Factory Lead Time :

5 Weeks

Drain to Source Breakdown Voltage :

-350V

Turn-Off Delay Time :

60 ns

Mounting Type :

Through Hole

Width :

4.19mm

Transistor Type :

1 P-Channel

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2V @ 1mA

RoHS :

Details

Transistor Element Material :

SILICON

Additional Feature :

LOGIC LEVEL COMPATIBLE