ZXTD2M832TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Power Dissipation :

1.7W

Vce Saturation (Max) @ Ib, Ic :

300mV @ 350mA, 3.5A

Current - Collector Cutoff (Max) :

25nA

Polarity :

PNP

Terminal Position :

QUAD

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Collector Base Voltage (VCBO) :

-25V

Peak Reflow Temperature (Cel) :

260

Package / Case :

8-VDFN Exposed Pad

Element Configuration :

Dual

Transition Frequency :

180MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Collector Current :

-3.5A

Length :

3mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 2A 2V

Power Dissipation :

3W

Frequency :

180MHz

Emitter Base Voltage (VEBO) :

7.5V

Max Breakdown Voltage :

20V

Number of Terminations :

10

Collector Emitter Breakdown Voltage :

20V

Height :

1mm

Pin Count :

10

Number of Elements :

2

Current Rating :

-3.5A

Gain Bandwidth Product :

180MHz

Terminal Finish :

Matte Tin (Sn)

Voltage - Rated DC :

-20V

Transistor Application :

SWITCHING

Mount :

Surface Mount

Published :

2006

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Type :

2 PNP (Dual)

Lead Free :

Lead Free

Packaging :

Cut Tape (CT)

Base Part Number :

ZXTD2M832

Collector Emitter Voltage (VCEO) :

300mV

Operating Temperature :

-55°C~150°C TJ

Case Connection :

COLLECTOR

JESD-609 Code :

e3

Collector Emitter Saturation Voltage :

-240mV

Width :

2mm

Power - Max :

1.7W

Max Collector Current :

3.5A

Qualification Status :

Not Qualified

Terminal Form :

Flat

Number of Pins :

832

JESD-30 Code :

R-PQFP-F10

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant