2ED2101S06FXUMA1
- Mfr.Part #
- 2ED2101S06FXUMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- LEVEL SHIFT SOI
- Stock
- 18,772
- In Stock :
- 18,772
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Gate Drivers
- Voltage - Supply :
- 10V ~ 20V
- Input Type :
- Non-Inverting
- Gate Type :
- IGBT, N-Channel MOSFET
- Rise / Fall Time (Typ) :
- 70ns, 35ns
- Maximum Operating Temperature :
- + 125 C
- Rise Time :
- 70 ns
- Output Current :
- 290 mA
- Product Status :
- Active
- Series :
- -
- High Side Voltage - Max (Bootstrap) :
- 650 V
- Bridge Type :
- Half Bridge
- Logic Voltage - VIL, VIH :
- 1.1V, 1.7V
- Number of Outputs :
- 2 Output
- Mounting Style :
- SMD/SMT
- Number of Drivers :
- 2
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Minimum Operating Temperature :
- - 40 C
- Logic Type :
- CMOS, LSTTL
- Typical Operating Supply Voltage :
- 15 V
- Supply Voltage :
- 10 → 20V
- Pin Count :
- 8
- Peak Output Current :
- 700 mA
- Input Logic Compatibility :
- 3.3V/5V/15V/CMOS/LSTTL
- Maximum Operating Supply Voltage :
- 20 V
- Driver Configuration :
- Non-Inverting
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Operating Supply Current :
- 400 uA
- Channel Type :
- Independent
- Minimum Operating Supply Voltage :
- 10 V
- Driver Type :
- High and Low Side
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -40°C ~ 125°C (TA)
- Type :
- High-Side, Low-Side
- Current - Peak Output (Source, Sink) :
- 290mA, 700mA
- Package Type :
- DSO
- Driven Configuration :
- High-Side and Low-Side
- Supplier Device Package :
- PG-DSO-8-69
- Product :
- IGBT, MOSFET Gate Drivers
- Datasheets
- 2ED2101S06FXUMA1

Gate Drivers Infineon Technologies 2ED2101S06FXUMA1 Overview
The Gate Drivers Infineon Technologies 2ED2101S06FXUMA1 is a state-of-the-art level shift driver designed for high-efficiency and reliability in advanced electronic systems. This product by Infineon Technologies stands out for its robust design and optimal performance in handling high voltage transitions. Built on Silicon on Insulator (SOI) technology, it provides excellent electrical insulation and reduced parasitic capacitance, enhancing the overall system performance. Its application spans across various high-demand environments, making it a cornerstone for developing high-performance, scalable electronic architectures. The integration of advanced level shift capabilities in the 2ED2101S06FXUMA1 allows for seamless signal management and enhanced gate driving functionalities, pivotal for modern electronic applications requiring precise control and robust operation.
2ED2101S06FXUMA1 Features
The 2ED2101S06FXUMA1 from Infineon Technologies incorporates multiple features designed for superior electronic control:
- Advanced SOI technology for high insulation and minimal leakage.
- Enhanced level shifting capabilities to manage high voltage transitions effectively.
- Compact design facilitating easy integration into existing and new systems.
- High durability and reliability under extreme conditions.
- Optimized for low power consumption and high efficiency.
2ED2101S06FXUMA1 Applications
- Electric Vehicles: Used in the powertrain systems to manage the high voltage levels between the battery and the motor, ensuring efficient power transmission.
- Renewable Energy Systems: Integral in solar inverters and wind turbine converters, facilitating effective power conversion and grid synchronization.
- Industrial Automation: Enhances the control of high-power industrial machinery by providing reliable gate driving in harsh industrial environments.
- Consumer Electronics: Applied in the power management systems of high-end consumer electronics to ensure stability and efficiency in power handling.
- Data Centers: Utilized in power supply units where stable and efficient power conversion is critical for uninterrupted data center operations.
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