
2N1054

- Mfr.Part #
- 2N1054
- Manufacturer
- General Semiconductor
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 115V 1A TO5
- Stock
- 447





- In Stock :
- 447
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- Manufacturer :
- General Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package :
- Bulk
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 200mA, 6V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 20mA, 200mA
- Mounting Type :
- Through Hole
- Operating Temperature :
- -
- Transistor Type :
- -
- Voltage - Collector Emitter Breakdown (Max) :
- 115 V
- Supplier Device Package :
- TO-5
- Frequency - Transition :
- 8MHz
- Current - Collector Cutoff (Max) :
- 5μA (ICBO)
- Current - Collector (Ic) (Max) :
- 1 A
- Series :
- -
- Power - Max :
- 5 W
- Product Status :
- Obsolete
- Datasheets
- 2N1054
- - 5μA (ICBO) TO-205AA, TO-5-3 Metal Can Through Hole
2N1054 Overview
In this device, the DC current gain is 20 @ 200mA, 6V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 20mA, 200mA.Product comes in the supplier's device package TO-5.There is a 115 V maximal voltage in the device due to collector-emitter breakdown.
2N1054 Features
the DC current gain for this device is 20 @ 200mA, 6V
the vce saturation(Max) is 600mV @ 20mA, 200mA
the supplier device package of TO-5
2N1054 Applications
There are a lot of General Semiconductor
2N1054 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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