2N2219A
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- Mfr.Part #
- 2N2219A
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.8A TO39
- Stock
- 208
- In Stock ：
- 208
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 8 Weeks
- Transistor Type :
- NPN
- Max Power Dissipation :
- 800mW
- RoHS Status :
- Non-RoHS Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Power Dissipation :
- 800mW
- Packaging :
- Bulk
- Radiation Hardening :
- No
- Power - Max :
- 800mW
- Min Operating Temperature :
- -55°C
- Max Operating Temperature :
- 200°C
- Max Collector Current :
- 800mA
- Collector Emitter Voltage (VCEO) :
- 50V
- Current - Collector Cutoff (Max) :
- 10nA
- Collector Base Voltage (VCBO) :
- 75V
- Published :
- 2007
- Mounting Type :
- Through Hole
- Supplier Device Package :
- TO-39 (TO-205AD)
- Number of Elements :
- 1
- Current - Collector (Ic) (Max) :
- 800mA
- Emitter Base Voltage (VEBO) :
- 6V
- Mount :
- Through Hole
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Collector Emitter Breakdown Voltage :
- 50V
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Operating Temperature :
- -55°C~200°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Polarity :
- NPN
- Datasheets
- 2N2219A
NPN -55°C~200°C TJ 10nA 1 Elements TO-205AD, TO-39-3 Metal Can Bulk Through Hole
2N2219A Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Product comes in the supplier's device package TO-39 (TO-205AD).There is a 50V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
2N2219A Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of TO-39 (TO-205AD)
2N2219A Applications
There are a lot of Microsemi Corporation
2N2219A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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