2N2219A
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- Mfr.Part #
- 2N2219A
- Manufacturer
- Solid State Inc.
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.8A TO39
- Stock
- 2,120
- In Stock ：
- 2,120
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- Manufacturer :
- Solid State Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 800mW
- Number of Elements :
- 1
- Min Operating Temperature :
- -55°C
- Packaging :
- Bulk
- RoHS Status :
- Non-RoHS Compliant
- Emitter Base Voltage (VEBO) :
- 6V
- Factory Lead Time :
- 8 Weeks
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 50V
- Number of Pins :
- 3
- Published :
- 2007
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Collector Base Voltage (VCBO) :
- 75V
- Max Operating Temperature :
- 200°C
- Max Collector Current :
- 800mA
- Current - Collector (Ic) (Max) :
- 800mA
- Supplier Device Package :
- TO-39 (TO-205AD)
- Operating Temperature :
- -55°C~200°C TJ
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 50V
- Power Dissipation :
- 800mW
- Mount :
- Through Hole
- Power - Max :
- 800mW
- Current - Collector Cutoff (Max) :
- 10nA
- Polarity :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Datasheets
- 2N2219A
NPN -55°C~200°C TJ 10nA 1 Elements TO-205AD, TO-39-3 Metal Can Bulk Through Hole
2N2219A Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Product comes in the supplier's device package TO-39 (TO-205AD).There is a 50V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
2N2219A Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of TO-39 (TO-205AD)
2N2219A Applications
There are a lot of Microsemi Corporation
2N2219A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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