2N5730

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Vce Saturation (Max) @ Ib, Ic :

-

Package :

Bulk

Qualification Status :

Not Qualified

JEDEC-95 Code :

TO-59

Subcategory :

Transistors

DC Current Gain-Min (hFE) :

30

Brand :

Microchip Technology

Operating Temperature :

-

VCEsat-Max :

1.2 V

Power Dissipation-Max (Abs) :

45 W

Supplier Device Package :

TO-59

Pbfree Code :

No

Number of Terminals :

3

Product Category :

Bipolar Transistors - BJT

Technology :

Si

DC Current Gain (hFE) (Min) @ Ic, Vce :

-

Package / Case :

TO-210AA, TO-59-4, Stud

JESD-30 Code :

O-MUPM-D3

Current - Collector Cutoff (Max) :

-

Terminal Position :

UPPER

Transistor Application :

SWITCHING

Current - Collector (Ic) (Max) :

10 A

Transistor Element Material :

SILICON

Product Status :

Active

Surface Mount :

No

Number of Elements :

1

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

80 V

Collector Current-Max (IC) :

10 A

Collector-Emitter Voltage-Max :

80 V

Package Shape :

Round

Product Type :

BJTs - Bipolar Transistors

Terminal Form :

Solder Lug

Power - Max :

45 W

Reach Compliance Code :

Unknown

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Frequency - Transition :

-

Series :

-

Mounting Type :

Stud Mount

Manufacturer :

Microchip

Transistor Polarity :

NPN

Polarity/Channel Type :

NPN

Configuration :

Single

Power Dissipation Ambient-Max :

52.5 W