2N6518TA
- Mfr.Part #
- 2N6518TA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 250V 0.5A TO92-3
- Stock
- 9,597
- In Stock :
- 9,597
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 45 @ 50mA 10V
- Transition Frequency :
- 40MHz
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Terminal Finish :
- MATTE TIN
- JESD-30 Code :
- O-PBCY-T3
- Pbfree Code :
- yes
- Surface Mount :
- No
- Configuration :
- Single
- Terminal Position :
- BOTTOM
- Mounting Type :
- Through Hole
- Frequency - Transition :
- 200MHz
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Qualification Status :
- COMMERCIAL
- Current - Collector (Ic) (Max) :
- 500mA
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Reach Compliance Code :
- Unknown
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Voltage - Collector Emitter Breakdown (Max) :
- 250V
- Number of Elements :
- 1
- Transistor Type :
- PNP
- Turn On Time-Max (ton) :
- 200ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Box (TB)
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 5mA, 50mA
- Number of Terminations :
- 3
- Turn Off Time-Max (toff) :
- 3.5ns
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Power - Max :
- 625mW
- Datasheets
- 2N6518TA

PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N6518TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 45 @ 50mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 5mA, 50mA.Parts of this part have transition frequencies of 40MHz.This device displays a 250V maximum voltage - Collector Emitter Breakdown.
2N6518TA Features
the DC current gain for this device is 45 @ 50mA 10V
the vce saturation(Max) is 1V @ 5mA, 50mA
a transition frequency of 40MHz
2N6518TA Applications
There are a lot of Rochester Electronics, LLC
2N6518TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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